Disorder-induced tail states in a gapped bilayer graphene

Abstract

The instanton approach to the in-gap fluctuation states is applied to the spectrum of biased bilayer graphene. It is shown that the density of states falls off with energy measured from the band-edge as $\nu (\epsilon )\propto \exp (-|\epsilon /{\epsilon }_t{|}^{3/2})$, where the characteristic tail energy, ${\epsilon }_t$, scales with the concentration of impurities, $n_i$, as $n_i^{2/3}$. While the bare energy spectrum is characterized by two energies: the bias-induced gap, $V$, and interlayer tunneling, $t_{\perp }$, the tail, ${\epsilon }_t$, contains a {\it single} combination $V^{1/3}{t}_{\perp }^{2/3}$. We show that the above expression for $\nu (\epsilon )$ in the tail actually applies all the way down to the mid-gap.

7 pages, 4 figures

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• Electronic compressibility of layer polarized bilayer graphene
• Influence of disorder on conductance in bilayer graphene under perpendicular electric field
• Measurement of the electronic compressibility of bilayer graphene
• Resistance noise in electrically biased bilayer graphene
• Thermopower of gapped bilayer graphene
• Anomalous Photon-Assisted Tunneling in Graphene
• Capacitance of Graphene Bilayer as a Which-Layer Probe
• Bound state energy of a Coulomb impurity in gapped bilayer graphene: "Hydrogen atom with a Mexican hat"
• Random network models with variable disorder of geometry
• Optical and transport gaps in gated bilayer graphene
• External gates and transport in biased bilayer graphene
• Thermopower of multilayer graphene
• Localized states due to expulsion of resonant impurity levels from the continuum in bilayer graphene
• Comparison of microscopic models for disorder in bilayer graphene: Implications for the density of states and the optical conductivity
• Observation of Tunneling Current in Semiconducting Graphene p-n Junctions
• Time-Dependent Strain in Graphene
• Disorder-induced magnetooscillations in bilayer graphene at high bias
• Long-living excited states of a 2D diamagnetic exciton
• Impurity states and Localization in Bilayer Graphene: the Low Impurity Concentration Regime