Influence of disorder on conductance in bilayer graphene under perpendicular electric field

Abstract

Electron transport in bilayer graphene placed under a perpendicular electric field is revealed experimentally. Steep increase of the resistance is observed under high electric field; however, the resistance does not diverge even at low temperatures. The observed temperature dependence of the conductance consists of two contributions: the thermally activated (TA) conduction and the variable range hopping (VRH) conduction. We find that for the measured electric field range (0 - 1.3 V/nm) the mobility gap extracted from the TA behavior agrees well with the theoretical prediction for the band gap opening in bilayer graphene, although the VRH conduction deteriorates the insulating state more seriously in bilayer graphene with smaller mobility. These results show that the improvement of the mobility is crucial for the successful operation of the bilayer graphene field effect transistor.

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• Enhanced Thermoelectric Power in Dual-Gated Bilayer Graphene
• Band structures of bilayer graphene superlattices
• Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
• Complementary-like Graphene Logic Gates Controlled by Electrostatic Doping
• Gap state analysis in electric-field-induced band gap for bilayer graphene
• Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs
• Bound state energy of a Coulomb impurity in gapped bilayer graphene: "Hydrogen atom with a Mexican hat"
• Gate-controlled conductance through bilayer graphene ribbons
• Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators
• Evidence of Lifshitz transition in thermoelectric power of ultrahigh mobility bilayer graphene
• Gate tunable non-linear currents in bilayer graphene diodes
• Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon
• Understanding interface properties in 2D heterostructure FETs
• Terahertz photoconductivity in bilayer graphene transistors: evidence for tunneling at gate-induced junctions
• Marginally Self-Averaging One-Dimensional Localization in Bilayer Graphene
• Unipolar transport in bilayer graphene controlled by multiple p-n interfaces
• Current flow in biased bilayer graphene: the role of sublattices
• Observation of Tunneling Current in Semiconducting Graphene p-n Junctions
• Continuous and reversible tuning of the disorder-driven superconductor-insulator transition in bilayer graphene
• Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers
• Gate-induced Gap in Bilayer Graphene Suppressed by Coulomb Repulsion
• Contact resistance at planar metal contacts on bilayer graphene and effects of molecular insertion layers
• Magnetotransport study of the mini-Dirac cone in AB-stacked four- to six-layer graphene under perpendicular electric field
• Disorder induced field effect transistor in bilayer and trilayer graphene
• Electron-electron interactions in non-equilibrium bilayer graphene
• Temperature-induced phase transitions in the quantum Hall magnet of bilayer graphene
• Complete Spin and Valley Polarization by Total External Reflection from Potential Barriers in Bilayer Graphene and Monolayer Transition Metal Dichalcogenides
• Hexagonal boron nitride/bilayer graphene moiré superlattices in the Dirac-material family: energy-band engineering and carrier doping by dual gating