Complementary-like Graphene Logic Gates Controlled by Electrostatic Doping

Abstract

Realization of logic circuits from graphene is very attractive for high-speed nanoelectronics. However, the intrinsic ambipolar nature hinders the formation of graphene logic devices with the conventional complementary architecture. Using electrostatic doping modulation, we show here a facile method to control the charge neutrality points and form a complementary-like structure, in which the ambipolar conduction is used as a benefit rather than a drawback to construct logic devices. A band gap is also introduced in the channels to improve the switching ratio of the graphene transistors. For the first time, complementary-like NOR and NAND logic gates were demonstrated. This method provides a possible route for logic circuits from ambipolar graphene and, in principle, can be also extended to other ambipolar semiconductors, such as organic compounds and carbon nanotube thin films.

16 pages, 7 figures

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Cited by in corpus (5)

• Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
• Versatile sputtering technology for Al2O3 gate insulators on graphene
• Unipolar transport in bilayer graphene controlled by multiple p-n interfaces
• Carrier Injection and Scattering in Atomically Thin Chalcogenides
• Observation of Tunneling Current in Semiconducting Graphene p-n Junctions