activity
20102015
most citedQuantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates

389 citations · 1.1k across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2015★ 11 cited

Carrier Injection and Scattering in Atomically Thin Chalcogenides

Song-Lin Li, Kazuhito Tsukagoshi

Atomically thin two-dimensional chalcogenides such as MoS2 monolayers are structurally ideal channel materials for the ultimate atomic electronics. However, a heavy thickness depen…

cond-mat.mes-hall2014★ 186 cited

Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers

Song-Lin Li, K. Komatsu, Shu Nakaharai +4

Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applicati…

cond-mat.mes-hall2013★ 358 cited

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors

Song-Lin Li, Katsunori Wakabayashi, Yong Xu +6

Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility (μ…

cond-mat.mes-hall2013★ 389 cited

Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates

Song-Lin Li, Hisao Miyazaki, Haisheng Song +3

We demonstrate the possibility in quantifying the Raman intensities for both specimen and substrate layers in a common stacked experimental configuration and, consequently, propose…

cond-mat.mes-hall2012★ 12 cited

Unipolar transport in bilayer graphene controlled by multiple p-n interfaces

Hisao Miyazaki, Song-Lin Li, Shu Nakaharai +1

Unipolar transport is demonstrated in a bilayer graphene with a series of p-n junctions and is controlled by electrostatic biasing by a comb-shaped top gate. The OFF state is induc…

cond-mat.mes-hall2011★ 17 cited

Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon

Shu Nakaharai, Tomohiko Iijima, Shinichi Ogawa +5

The concept of a novel graphene P-I-N junction switching device with a nanoribbon is proposed, and its basic operation is demonstrated in an experiment. The concept aims to optimiz…