Integrated complementary graphene inverter
arXiv:0904.2745 · doi:10.1063/1.3148342
Abstract
The operation of a digital logic inverter consisting of one p- and one n-type graphene transistor integrated on the same sheet of monolayer graphene is demonstrated. The type of one of the transistors was inverted by moving its Dirac point to lower gate voltages via selective electrical annealing. Boolean inversion is obtained by operating the transistors between their Dirac points. The fabricated inverter represents an important step towards the development of digital integrated circuits on graphene.
4 pages, 4 figures
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- Complementary-like Graphene Logic Gates Controlled by Electrostatic Doping
- Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels
- Exploiting negative differential resistance in monolayer graphene FETs for high voltage gains
- Unipolar transport in bilayer graphene controlled by multiple p-n interfaces
- Carrier Injection and Scattering in Atomically Thin Chalcogenides
- Enhanced architectures for room-temperature reversible logic gates in graphene
- High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors