Exploiting negative differential resistance in monolayer graphene FETs for high voltage gains

Abstract

Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene FETs in the bias region of negative output differential resistance. We show that, compared to the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5--3 and the need for a careful circuit stabilization.

7 pages, 10 figures

References in corpus (7)

• Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors
• Integrated complementary graphene inverter
• Dual Gate Graphene FETs with fT of 50 GHz
• Conductance asymmetry of graphene pn junction
• Ultimate RF Performance Potential of Carbon Electronics
• Contact-induced negative differential resistance in short-channel graphene FETs
• Influence of Metal-Graphene Contact on the Operation and Scalability of Graphene Field-Effect-Transistors

Cited by in corpus (4)

• Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering non-reciprocal capacitances
• Radio frequency performance projection and stability trade-off of h-BN encapsulated graphene field-effect transistors
• Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?
• Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback