Dual Gate Graphene FETs with fT of 50 GHz

Abstract

A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/Vs, a cutoff frequency of 50 GHz is demonstrated in a 350-nm gate length device. This fT value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOSFETs at the same gate length, illustrating the potential of graphene for RF applications.

References in corpus (3)

• The electronic properties of graphene
• A Graphene Field-Effect Device
• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric

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