BN/Graphene/BN Transistors for RF Applications
arXiv:1108.2021 · doi:10.1109/LED.2011.2160611
Abstract
In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate dielectric. Field effect transistors (FETs) using a bilayer graphene channel have been fabricated with a gate length LG=450 nm. A current density in excess of 1 A/mm and DC transconductance close to 250 mS/mm are achieved for both electron and hole conductions. RF characterization is performed for the first time on this device structure, giving a current-gain cut-off frequency fT=33 GHz and an fT.LG product of 15 GHz.um. The improved performance obtained by the BN/Graphene/BN structure is very promising to enable the next generation of high frequency graphene RF electronics.
3 pages, 5 figures, accepted for publication in IEEE Electron Device Letters
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- Prospects of Direct Growth Boron Nitride Films as Substrates for Graphene Electronics
- Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
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- Delay Analysis of Graphene Field-Effect Transistors
- All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts
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- Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering
- The true corrugation of a h-BN nanomesh layer
- Umklapp electron-electron scattering in bilayer graphene moiré superlattice
- Tunable electronic properties of partially edge-hydrogenated armchair boron-nitrogen-carbon nanoribbons