Graphene on Hexagonal Boron Nitride
arXiv:1401.5145 · doi:10.1088/0953-8984/26/30/303201
Abstract
The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation electronic devices and a convenient low-energy testbed for intrinsically high-energy physical phenomena. Both of these research branches require the facile fabrication of clean graphene devices so as not to obscure its intrinsic physical properties. Hexagonal boron nitride has emerged as a promising substrate for graphene devices, as it is insulating, atomically flat and provides a clean charge environment for the graphene. Additionally, the interaction between graphene and boron nitride provides a path for the study of new physical phenomena not present in bare graphene devices. This review focuses on recent advancements in the study of graphene on hexagonal boron nitride devices from the perspective of scanning tunneling microscopy with highlights of some important results from electrical transport measurements.
Review article, 39 pages, 22 figures
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Cited by in corpus (27)
- Electronic properties of graphene hexagonal boron nitride moiré superlattice
- Band Structure Engineering of 2D Materials using Patterned Dielectric Superlattices
- Interlayer interaction in general incommensurate atomic layers
- Spontaneous Strains and Gap in Graphene on Boron Nitride
- Molecular Assembly on Two-Dimensional Materials
- Interlayer Decoupling in 30° Twisted Bilayer Graphene Quasicrystal
- Moire superlattice effects in graphene/boron-nitride van der Waals heterostructures
- Band structure of twisted bilayer graphene on hexagonal boron nitride
- Electronic structure of spontaneously strained graphene on hexagonal Boron Nitride
- An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures
- Nonlinear photocurrents in two-dimensional systems based on graphene and boron nitride
- Metal-Insulator Transition in Graphene on Boron Nitride
- Twistronics in graphene-based van der Waals structures
- Enhanced Light-Matter Interaction in Graphene/h-BN van der Waals Heterostructures
- All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts
- Effective Mass in Bilayer Graphene at Low Carrier Densities: the Role of Potential Disorder and Electron-Electron Interaction
- Simultaneous measurement of anisotropic thermal conductivity and thermal boundary conductance of 2-dimensional materials
- Electronic properties of twisted bilayer graphene suspended and encapsulated with hexagonal boron nitride
- Mesoscopic valley filter in graphene Corbino disk containing a p-n junction
- A primer on twistronics: A massless Dirac fermion's journey to moiré patterns and flat bands in twisted bilayer graphene
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- Strongly Absorbing Nanoscale Infrared Domains within Graphene Bubbles
- Designing Band Structures by Patterned Dielectric Superlattices
- Chiral properties of graphene h-BN hybrid systems
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- Topological phase diagram of twisted bilayer graphene as a function of the twist angle
- Hexagonal boron nitride/bilayer graphene moiré superlattices in the Dirac-material family: energy-band engineering and carrier doping by dual gating