Boundary Scattering in Ballistic Graphene

Abstract

We report magnetotransport measurements in ballistic graphene/hexagonal boron nitride mesoscopic wires where the charge carrier mean free path is comparable to wire width $W$. Magnetoresistance curves show characteristic peak structures where the peak field scales with the ratio of cyclotron radius $R_{\text{c}}$ and wire width $W$ as $W/R_{\text{c}}=0.9\pm 0.1$, due to diffusive boundary scattering. The obtained proportionality constant between $R_{\text{c}}$ and $W$ differs from that of a classical semiconductor 2D electron system where $W/R_{\text{c}}=0.55$.

14 pages, 4 figures

References in corpus (20)

• Electric Field Effect in Atomically Thin Carbon Films
• Boron nitride substrates for high-quality graphene electronics
• Energy Band Gap Engineering of Graphene Nanoribbons
• Suspended Graphene: a bridge to the Dirac point
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Chaotic Dirac billiard in graphene quantum dots
• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• Charged Impurity Scattering in Graphene
• Carrier transport in 2D graphene layers
• Temperature dependent transport in suspended graphene
• Quantum interference and Klein tunneling in graphene heterojunctions
• Quantum-limited shot noise in graphene
• Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
• Defect scattering in graphene
• Substrate limited electron dynamics in graphene
• Limits on electron quality in suspended graphene due to flexural phonons
• Tunable Coulomb blockade in nanostructured graphene
• Shot Noise in Ballistic Graphene
• Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope
• Observation of half-integer quantum Hall effect in single-layer graphene using pulse magnet