Observation of half-integer quantum Hall effect in single-layer graphene using pulse magnet

Abstract

We report magnetotransport measurements on a single-layer graphene in pulsed magnetic fields up to $B$ = 53 T. With either electron- or hole-type charge carriers, the Hall resistance $R_H$ is quantized into $R_H$ = $(h/e^2){\nu }^{-1}$ with $\nu$ = $\pm$2, $\pm$6, and $\pm$10, which demonstrates the observation of half-integer quantum Hall effect (QHE). At $B$ = 50 T, the half-integer QHE is even observed at room temperature in spite of a conventional carrier mobility $\mu$ = 4000 cm${}^2$/Vs.

10 pages, 4 figures, accepted for publication in J. Phys. Soc. Jpn. (Letter)

References in corpus (12)

• Electric Field Effect in Atomically Thin Carbon Films
• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
• Room-Temperature Quantum Hall Effect in Graphene
• Electronic Properties of Disordered Two-Dimensional Carbon
• Strong suppression of weak (anti)localization in graphene
• Quantum Hall Ferromagnetism in Graphene
• Landau Level Splitting in Graphene in High Magnetic Fields
• The Nature of Quantum Hall States near the Charge Neutral Dirac Point in Graphene
• Excitonic gap, phase transition, and quantum Hall effect in graphene
• The Fractional Quantum Hall States of Dirac Electrons in Graphene
• Fractional Quantum Hall Effect in Graphene

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