Observation of half-integer quantum Hall effect in single-layer graphene using pulse magnet

Abstract

We report magnetotransport measurements on a single-layer graphene in pulsed magnetic fields up to $B$ = 53 T. With either electron- or hole-type charge carriers, the Hall resistance $R_H$ is quantized into $R_H$ = $(h/e^2){\nu }^{-1}$ with $\nu$ = $\pm$2, $\pm$6, and $\pm$10, which demonstrates the observation of half-integer quantum Hall effect (QHE). At $B$ = 50 T, the half-integer QHE is even observed at room temperature in spite of a conventional carrier mobility $\mu$ = 4000 cm${}^2$/Vs.

10 pages, 4 figures, accepted for publication in J. Phys. Soc. Jpn. (Letter)

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Cited by in corpus (1)

• Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope