Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope
arXiv:0812.0048 · doi:10.1063/1.3089693
Abstract
We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphene using tapping-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphene nanoribbon (GNR). The conductance of the GNR at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to lateral confinement of charge carriers. These results show that LAO lithography is an effective technique for the fabrication of graphene nanodevices.
4 pages, 4 figures
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Cited by in corpus (7)
- Production, properties and potential of graphene
- Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene
- Superconductivity in rhombohedral trilayer graphene
- Half and quarter metals in rhombohedral trilayer graphene
- Boundary Scattering in Ballistic Graphene
- Nanoscale electrostatic control in ultra clean van der Waals heterostructures by local anodic oxidation of graphite gates
- Graphene nanoribbons: relevance of etching process