Chemical Vapor Deposition-Assembled Graphene Field-Effect Transistor on Hexagonal Boron Nitride
arXiv:1105.1485 · doi:10.1063/1.3604012
Abstract
We investigate key electrical properties of monolayer graphene assembled by chemical-vapor-deposition (CVD) as impacted by supporting substrate material. Graphene field-effect transistors (GFETs) were fabricated with carbon channel placing directly on hexagonal boron nitride (h-BN) and SiO2, respectively. Small-signal transconductance (gm) and effective carrier mobility (μeff) are improved by 8.5 and 4 times on h-BN, respectively, as compared with that on SiO2. Compared with GFET with exfoliated graphene on SiO2, gm and μeff measured from device with CVD graphene on h-BN substrate exhibits comparable values. The experiment demonstrates the potential of employing h-BN as a platform material for large-area carbon electronics.
12 pages, 4 figures
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Cited by in corpus (10)
- Generic Miniband Structure of Graphene on a Hexagonal Substrate
- Unraveling the 3D atomic structure of a suspended graphene/hBN van der Waals heterostructure
- Graphene on Hexagonal Boron Nitride
- Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy
- Moire superlattice effects in graphene/boron-nitride van der Waals heterostructures
- Prospects of Direct Growth Boron Nitride Films as Substrates for Graphene Electronics
- Stacking in incommensurate graphene/hexagonal-boron-nitride heterostructures based on ab initio study of interlayer interaction
- Impact ionization and transport properties of hexagonal boron nitride in constant-voltage measurement
- Gate dependent Raman spectroscopy of graphene on hexagonal boron nitride
- Infrared study of Large scale h-BN film and Graphene/h-BN heterostructure