Generic Miniband Structure of Graphene on a Hexagonal Substrate

Abstract

Using a general symmetry-based approach, we provide a classification of generic miniband structures for electrons in graphene placed on substrates with the hexagonal Bravais symmetry. In particular, we identify conditions at which the first moiré miniband is separated from the rest of the spectrum by either one or a group of three isolated mini Dirac points and is not obscured by dispersion surfaces coming from other minibands. In such cases the Hall coefficient exhibits two distinct alternations of its sign as a function of charge carrier density.

8 pages, 4 figures

References in corpus (11)

• Boron nitride substrates for high-quality graphene electronics
• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
• Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
• Anisotropic behaviors of massless Dirac fermions in graphene under periodic potential
• Continuum Model of the Twisted Bilayer
• New Generation of Massless Dirac Fermions in Graphene under External Periodic Potentials
• Intervalley scattering, long-range disorder, and effective time reversal symmetry breaking in graphene
• Effect of Disorder on Transport in Graphene
• Zero Energy Modes and Gate-Tunable Gap in Graphene on hexagonal Boron Nitride
• Band structure and gaps of triangular graphene superlattices

Cited by in corpus (144)

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• Negative differential resistance in Van der Waals heterostructures due to moiré-induced spectral reconstruction
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• Topological domain-wall states from Umklapp scattering in twisted bilayer graphene
• Controlled formation of an isolated miniband in bilayer graphene on an almost commensurate $\sqrt{3}\times \sqrt{3}$ substrate
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