Enhanced valley polarization of graphene on hBN under circularly polarized light irradiation
arXiv:2207.14399 · doi:10.1103/PhysRevB.106.075403
Abstract
Graphene on hBN (G/hBN) has a long period moiré superstructure owing to the lattice mismatch between two materials. Long periodic potential caused by the moiré superstructure induces modulation of electronic properties of the system. In this paper, we numerically calculate optical conductivity of G/hBN under circularly polarized light irradiation. The lack of spatial inversion symmetry in G/hBN induces the valley polarization. In further, the valley polarization becomes most pronounced in the infrared and terahertz regions if the twist angle between two materials is close to zero for non-doping case, however, insensitive with twist angle for hole-doped case. These results will serve to design the valleytronics devices using G/hBN.
7 pages, 4 figures
References in corpus (12)
- The electronic properties of graphene
- 2D materials and van der Waals heterostructures
- Valley polarization in MoS2 monolayers by optical pumping
- Valley filter and valley valve in graphene
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- Flat Bands in Slightly Twisted Bilayer Graphene
- Continuum Model of the Twisted Bilayer
- Electronic properties of graphene hexagonal boron nitride moiré superlattice
- Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field
- Moir{é} patterns as a probe of interplanar interactions: graphene on h-BN
- Moiré effects in graphene--hBN heterostructures
- Momentum selective optical absorption in triptycene molecular membrane