Electronic properties of graphene hexagonal boron nitride moiré superlattice
arXiv:1406.0668 · doi:10.1103/PhysRevB.90.155406
Abstract
We theoretically investigate the electronic structures of moiré superlattices arising in monolayer / bilayer graphene stacked on hexagonal boron nitride (hBN) in presence and absence of magnetic field. We develop an effective continuum model from a microscopic tight-binding lattice Hamiltonian, and calculate the electronic structures of graphene-hBN systems with different rotation angles. Using the effective model, we explain the characteristic band properties such as the gap opening at the corners of the superlattice Brillouin zone (mini-Dirac point). We also investigate the energy spectrum and quantum Hall effect of graphene-hBN systems in uniform magnetic field and demonstrate the evolution of the fractal spectrum as a function of the magnetic field. The spectrum generally splits in the valley degrees of freedom ( and ) due to the lack of the inversion symmetry, and the valley splitting is more significant in bilayer graphene on hBN than in monolayer graphene on hBN because of the stronger inversion-symmetry breaking in bilayer.
14 pages, 10 figures
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- Moiré Commensurability and the Quantum Anomalous Hall Effect in Twisted Bilayer Graphene on Hexagonal Boron Nitride
- Double moiré with a twist: super-moiré in encapsulated graphene
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- Topological flat bands in rhombohedral tetralayer and multilayer graphene on hexagonal boron nitride moire superlattices
- Moiré Fractional Chern Insulators III: Hartree-Fock Phase Diagram, Magic Angle Regime for Chern Insulator States, the Role of the Moiré Potential and Goldstone Gaps in Rhombohedral Graphene Superlattices
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- Magnetic ratchet effect in bilayer graphene
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- Accurate Measurement of the Gap of Graphene/hBN Moiré Superlattice through Photocurrent Spectroscopy
- Moiré edge states in twisted bilayer graphene and their topological relation to quantum pumping
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- Atomic real-space perspective of light-field-driven currents in graphene
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- Strong gate-tunability of flat bands in bilayer graphene due to moiré encapsulation between hBN monolayers
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- Unveiling the Miniband Structure of Graphene Moiré Superlattices via Gate-dependent Terahertz Photocurrent Spectroscopy
- Designing Band Structures by Patterned Dielectric Superlattices
- Moiré fractals in twisted graphene layers
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- Klein tunneling degradation and enhanced Fabry-Pérot interference in graphene/h-BN moiré-superlattice devices
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- Semimetallic and semiconducting graphene-hBN multilayers with parallel or reverse stacking
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- Anisotropic Optical Properties of Hexagonal Boron Nitride Thin Films
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