Band structure of twisted bilayer graphene on hexagonal boron nitride
arXiv:2005.07396 · doi:10.1103/PhysRevB.102.155136
Abstract
The effect of an hexagonal boron nitride (hBN) layer close aligned with twisted bilayer graphene (TBG) is studied. At sufficiently low angles between twisted bilayer graphene and hBN, , the graphene electronic structure is strongly disturbed. The width of the low energy peak in the density of states changes from meV for a decoupled system to meV. Spikes in the density of states due to van Hove singularities are smoothed out. We find that for a realistic combination of the twist angle in the TBG and the twist angle between the hBN and the graphene layer the system can be described using a single moiré unit cell.
arXiv comment7+10 pages; main text + supplementary information
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