Misalignment instability in magic-angle twisted bilayer graphene on hexagonal boron nitride
arXiv:2011.01541 · doi:10.1088/2053-1583/abddcb
Abstract
We study the stability and electronic structure of magic-angle twisted bilayer graphene on the hexagonal boron nitride (TBG/BN). Full relaxation has been performed for commensurate supercells of the heterostructures with different twist angles () and stackings between TBG and BN. We find that the slightly misaligned configuration with and the AA/AA stacking has the globally lowest total energy due to the constructive interference of the moiré interlayer potentials and thus the greatly enhanced relaxation in its commensurate supercell. Gaps are opened at the Fermi level () for small supercells with the stackings that enable strong breaking of the symmetry in the atomic structure of TBG. For large supercells with close to those of the supercells, the broadened flat bands can still be resolved from the spectral functions. The is also identified as a critical angle for the evolution of the electronic structure with , at which the energy range of the mini-bands around begins to become narrower with increasing and their gaps from the dispersive bands become wider. The discovered stablest TBG/BN with a finite of about and its gapped flat bands agree with recent experimental observations.
8 pages, 6 figures
References in corpus (7)
- Lattice relaxation and energy band modulation in twisted bilayer graphenes
- Origin of band gaps in graphene on hexagonal boron nitride
- The crucial role of atomic corrugation on the flat bands and energy gaps of twisted bilayer graphene at the "magic angle"
- Continuum models for twisted bilayer graphene: the effects of lattice deformation and hopping parameter
- Structure of twisted and buckled bilayer graphene
- Moiré band model and band gaps of graphene on hexagonal boron nitride
- Symmetry breaking in the double moiré superlattices of relaxed twisted bilayer graphene on hexagonal boron nitride