Twist-controlled Resonant Tunnelling between Monolayer and Bilayer Graphene
arXiv:1512.03028 · doi:10.1063/1.4935988
Abstract
We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using a self-consistent description of the device's electrostatic configuration we relate the current to three distinct tunable voltages across the system and hence produce a two-dimensional map of the I-V characteristics in the low energy regime. We show that the use of gates either side of the heterostructure offers a fine degree of control over the device's rich array of characteristics, as does varying the twist between the graphene electrodes.
5 pages including references and 3 figures
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Cited by in corpus (10)
- Composite super-moiré lattices in double aligned graphene heterostructures
- Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures
- Stacking transition in bilayer graphene caused by thermally activated rotation
- Resonant tunneling and the quasiparticle lifetime in graphene/boron nitride/graphene heterostructures
- Twisted monolayer and bilayer graphene for vertical tunneling transistors
- Multiple negative differential conductance regions and inelastic phonon assisted tunneling in graphene-hBN-graphene structures
- Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure
- Valley-polarised tunnelling currents in bilayer graphene tunnelling transistors
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- Probing the features of electron dispersion by tunneling between slightly twisted bilayer graphene sheets