Resonant tunneling and the quasiparticle lifetime in graphene/boron nitride/graphene heterostructures
arXiv:1512.08684 · doi:10.1103/PhysRevB.93.125417
Abstract
Tunneling of quasiparticles between two nearly-aligned graphene sheets produces resonant current-voltage characteristics because of the quasi-exact conservation of in-plane momentum. We claim that, in this regime, vertical transport in graphene/boron nitride/graphene heterostructures carries precious information on electron-electron interactions and the quasiparticle spectral function of the two-dimensional electron system in graphene. We present extensive microscopic calculations of the tunneling spectra with the inclusion of quasiparticle lifetime effects and elucidate the range of parameters (inter-layer bias, temperature, twist angle, and gate voltage) under which electron-electron interaction physics emerges.
8 pages, 5 figures
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- Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure
- Plasmon-assisted resonant tunneling in graphene-based heterostructures
- Quantum capacitance of double-layer graphene
- Quantized electron transport through graphene nanoconstrictions
- Resonance Effects in Correlated Multilayer Heterostructures
- Photon-Induced Suppression of Interlayer Tunneling in Van Der Waals Heterostructures
- Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors