Transport and particle-hole asymmetry in graphene on boron nitride
arXiv:1503.04312 · doi:10.1103/PhysRevB.91.245422
Abstract
All local electronic properties of graphene on a hexagonal boron nitride (hBN) substrate exhibit spatial moiré patterns related to lattice constant and orientation differences between shared triangular Bravais lattices. We apply a previously derived effective Hamiltonian for the -bands of graphene on h-BN to address the carrier-dependence of transport properties, concentrating on the conductivity features at four electrons and four holes per unit cell. These transport features measure the strength of Bragg scattering of -electrons off the moiré pattern, and exhibit a striking particle-hole asymmetry that we trace to specific features of the effective Hamiltonian that we interpret physically.
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- Flatbands in twisted double bilayer graphene
- Moiré band model and band gaps of graphene on hexagonal boron nitride
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- Enhanced electron-phonon coupling in doubly aligned hexagonal boron nitride bilayer graphene heterostructure
- Correlation-Driven Electron-Hole Asymmetry in Graphene Field Effect Devices
- Fractional Hofstadter States in Graphene on Hexagonal Boron Nitride
- Unveiling the Miniband Structure of Graphene Moiré Superlattices via Gate-dependent Terahertz Photocurrent Spectroscopy
- Field-induced insulating states in a graphene superlattice