Transport and particle-hole asymmetry in graphene on boron nitride
arXiv:1503.04312 · doi:10.1103/PhysRevB.91.245422
Abstract
All local electronic properties of graphene on a hexagonal boron nitride (hBN) substrate exhibit spatial moiré patterns related to lattice constant and orientation differences between shared triangular Bravais lattices. We apply a previously derived effective Hamiltonian for the -bands of graphene on h-BN to address the carrier-dependence of transport properties, concentrating on the conductivity features at four electrons and four holes per unit cell. These transport features measure the strength of Bragg scattering of -electrons off the moiré pattern, and exhibit a striking particle-hole asymmetry that we trace to specific features of the effective Hamiltonian that we interpret physically.
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Cited by in corpus (19)
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