Conductivity of graphene on boron nitride substrates
arXiv:1101.0299 · doi:10.1103/PhysRevB.83.121405
Abstract
We calculate theoretically the disorder-limited conductivity of monolayer and bilayer graphene on hexagonal boron nitride (h-BN) substrates, comparing our theoretical results with the recent experimental results. The comparison leads to a direct quantitative estimate of the underlying disorder strength for both short-range and long-range disorder in the graphene on h-BN system. We find that the good interface quality between graphene and h-BN leads to strongly suppressed charged impurity scattering compared with the corresponding SiO substrate case, thus producing very high mobility for the graphene on h-BN system.
5 pages, 4 figures
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Cited by in corpus (8)
- Charge-Carrier Screening in Single-Layer Graphene
- Coulomb Drag and High Resistivity Behavior in Double Layer Graphene
- Strain-tunable band gap in graphene/h-BN hetero-bilayer
- Transport and particle-hole asymmetry in graphene on boron nitride
- Midgap states and band gap modification in defective graphene/h-BN heterostructures
- Effect of charged impurity correlation on transport in monolayer and bilayer graphene
- Optical and transport gaps in gated bilayer graphene
- Gate tunable quantum transport in double layer graphene