Correlation-Driven Electron-Hole Asymmetry in Graphene Field Effect Devices

Abstract

Electron-hole asymmetry is a fundamental property in solids that can determine the nature of quantum phase transitions and the regime of operation for devices. The observation of electron-hole asymmetry in graphene and recently in the phase diagram of bilayer graphene has spurred interest into whether it stems from disorder or from fundamental interactions such as correlations. Here, we report an effective new way to access electron-hole asymmetry in 2D materials by directly measuring the quasiparticle self-energy in graphene/Boron Nitride field effect devices. As the chemical potential moves from the hole to the electron doped side, we see an increased strength of electronic correlations manifested by an increase in the band velocity and inverse quasiparticle lifetime. These results suggest that electronic correlations play an intrinsic role in driving electron hole asymmetry in graphene and provide a new insight for asymmetries in more strongly correlated materials.

22 pages, 7 figures

References in corpus (32)

• The electronic properties of graphene
• Charged Impurity Scattering in Graphene
• Carrier transport in 2D graphene layers
• A self-consistent theory for graphene transport
• Tunable Phase Boundaries and Ultra-Strong Coupling Superconductivity in Mirror Symmetric Magic-Angle Trilayer Graphene
• Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
• Abundance of correlated insulating states at fractional fillings of WSe${}_2$/WS${}_2$ moiré superlattices
• Spin-Orbit Proximity Effect in Graphene
• Giant Phonon-induced Conductance in Scanning Tunneling Spectroscopy of Gate-tunable Graphene
• Fermi velocity engineering in graphene by substrate modification
• Particle-Hole Symmetry and the $\nu =5/2$ Quantum Hall State
• Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
• Origin of band gaps in graphene on hexagonal boron nitride
• Cyclotron Resonance study of the electron and hole velocity in graphene monolayers
• Interaction phenomena in graphene seen through quantum capacitance
• Many-body interactions in quasi-freestanding graphene
• Velocity Renormalization and Carrier Lifetime in Graphene from Electron-Phonon Interaction
• Electron-phonon coupling and electron self-energy in electron-doped graphene: calculation of angular resolved photoemission spectra
• Single particle relaxation time versus transport scattering time in a 2D graphene layer
• $\Gamma$-Valley Transition-Metal-Dichalcogenide Moirè Bands
• Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment
• Inelastic carrier lifetime in graphene
• Numbers of donors and acceptors from transport measurements in graphene
• Phonon-limited resistivity of graphene by first-principle calculations: electron-phonon interactions, strain-induced gauge field and Boltzmann equation
• Ballistic Hot Electron Transport in Graphene
• Doped graphene as tunable electron-phonon coupling material
• Finite temperature inelastic mean free path and quasiparticle lifetime in graphene
• Kohn anomaly and interplay of electron-electron and electron-phonon interactions in epitaxial graphene
• Charge-Carrier Screening in Single-Layer Graphene
• Optical and plasmonic properties of twisted bilayer graphene: Impact of interlayer tunneling asymmetry and ground-state charge inhomogeneity
• Visualizing the Effect of an Electrostatic Gate with Angle-Resolved Photoemission Spectroscopy
• Transport and particle-hole asymmetry in graphene on boron nitride

Cited by in corpus (5)

• Ultrafast creation of a light induced semimetallic state in strongly excited 1T-TiSe${}_2$
• Revealing flat bands and hybridization gaps in a twisted bilayer graphene device with microARPES
• Inverse Faraday effect in 3d, 4d, and 5d transition metals
• Electronic structure of 2D van der Waals crystals and heterostructures investigated by spatially- and angle-resolved photoemission
• Pronounced scale-dependent charge carrier density in graphene quantum Hall devices