Ballistic Hot Electron Transport in Graphene

Abstract

We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and electron-electron scattering, we find that the inelastic scattering time $\tau \sim 10^{-2}-10^{-1}\mathrm{ps}$ and the mean free path $l\sim 10-10^2\mathrm{nm}$ for electron densities $n=10^{12}-10^{13}{\mathrm{cm}}^{-2}$. In particular, we find that the mean free path exhibits a finite jump at the phonon energy $200\mathrm{meV}$ due to electron-phonon interaction. Our results are directly applicable to device structures where ballistic transport is relevant with inelastic scattering dominating over elastic scattering.

4 pages

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Cited by in corpus (1)

• Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene