Valley-polarization in biased bilayer graphene using circularly polarized light
arXiv:2010.15305 · doi:10.1103/PhysRevB.103.075414
Abstract
Achieving a population imbalance between the two inequivalent valleys is a critical first step for any valleytronic device. A valley-polarization can be induced in biased bilayer graphene using circularly polarized light. In this paper, we present a detailed theoretical study of valley-polarization in biased bilayer graphene. We show that a nearly perfect valley-polarization can be achieved with the proper choices of external bias and pulse frequency. We find that the optimal pulse frequency is given by where is the potential energy difference between the graphene layers. We also find that the valley-polarization originates not from the Dirac points themselves, but rather from a ring of states surrounding each. Intervalley scattering is found to greatly reduce the valley-polarization for high frequency pulses. Thermal populations are found to significantly reduce the valley-polarization for small biases. This work provides insight into the origin of valley-polarization in bilayer graphene and will aid experimentalists seeking to study valley-polarization in the lab.
18 pages, 9 figures, v2: elaboration and readability improvements
References in corpus (23)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Valley polarization in MoS2 monolayers by optical pumping
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- The Valley Hall Effect in MoS2 Transistors
- Valley filter and valley valve in graphene
- Gate-induced insulating state in bilayer graphene devices
- Asymmetry gap in the electronic band structure of bilayer graphene
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- Detecting Topological Currents in Graphene Superlattices
- Photo-excitation Cascade and Multiple Carrier Generation in Graphene
- Impact of the electron-electron correlation on phonon dispersions: failure of LDA and GGA functionals in graphene and graphite
- Phonon dispersions and vibrational properties of monolayer, bilayer, and trilayer graphene
- Valley filter in strain engineered graphene
- High harmonic generation in undoped graphene: Interplay of inter- and intraband dynamics
- Generation of valley polarized current in bilayer graphene
- Ballistic Hot Electron Transport in Graphene
- Population Inversion in Monolayer and Bilayer Graphene
- Nonlinear Response of Bilayer Graphene at Terahertz Frequencies
- Nanospot Angle-Resolved Photoemission Study of Bernal-Stacked Bilayer Graphene on Hexagonal Boron Nitride: Band Structure and Local Variation of Lattice Alignment
- Non-adiabatic Hall effect at Berry curvature hot spot
- Theory of wavepacket transport under narrow gaps and spatial textures: non-adiabaticity and semiclassicality
Cited by in corpus (13)
- Controlling Valley-Polarisation in Graphene via Tailored Light Pulses
- Valley Degree of Freedom in Two-Dimensional van der Waals Materials
- Intense-pulse dynamics of massless Dirac electrons
- Ultrafast valley polarization in bilayer graphene
- Valley polarization, magnetization, and superconductivity in bilayer graphene near the van Hove singularity
- Effectuating tunable valley selection via multi-terminal monolayer graphene devices
- Topological frequency conversion in rhombohedral multilayer graphene
- Energy symmetry and interlayer wave function ratio of tunneling electrons in partially overlapped graphene
- Energy magnetization and transport in systems with a non-zero Berry curvature in a magnetic field
- All-electrical scheme for valley polarization in graphene
- Evanescent-mode-assisted Klein tunneling in dual-gated bilayer graphene
- Ultrafast Saddletronics
- The impact of nitrogen doping on the linear and nonlinear terahertz response of graphene