Energy symmetry and interlayer wave function ratio of tunneling electrons in partially overlapped graphene
arXiv:2501.12714 · doi:10.1103/pst8-c12q
Abstract
While the exponential decay of tunneling probability with barrier thickness is well known, the accompanying oscillations with thickness have been comparatively less explored. Using a tight binding model, we investigate an AB-stacked bilayer graphene region acting as an energy barrier between two monolayer graphene leads, under a vertical electric field. We discuss the case where the energy gap induced by the vertical electric field is comparable to the interlayer transfer integral. In the up (down) junction, the left and right monolayer leads are connected to different layers (a common layer) of the central bilayer, while the remaining, unconnected layers form armchair-type open edges. We reveal a characteristic relation between the tunneling probability and the wave function structure. Among the valley-resolved transmission probabilities, only the valley-reversed transmission in the up junction exhibits even symmetry with respect to energy . This result is counterintuitive. The interlayer wave function ratio is asymmetric in , i.e., , and electrons cannot bypass the interlayer path in the up junction, whereas they can in the down junction. We attribute this unexpected symmetry to a self-cancellation effect of , which arises from chiral and rotational symmetry operations combined with the conservation of probability. Our results demonstrate that the energy dependence of conductance in double junction structures serves as evidence of this effect.
arXiv comment17 pages, 12 figures
References in corpus (64)
- Valley contrasting physics in graphene: magnetic moment and topological transport
- Landau level degeneracy and quantum Hall effect in a graphite bilayer
- Valley filter and valley valve in graphene
- On-surface synthesis of graphene nanoribbons with zigzag edge topology
- Asymmetry gap in the electronic band structure of bilayer graphene
- Detecting Topological Currents in Graphene Superlattices
- Topological Origin of Zero-Energy Edge States in Particle-Hole Symmetric Systems
- Observation of an Electric-Field Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy
- Quantum Tunneling in Nuclear Fusion
- Topological confinement in bilayer graphene
- Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene
- Valley Chern Numbers and Boundary Modes in Gapped Bilayer Graphene
- Edge states in Graphene: from gapped flat band to gapless chiral modes
- Gate-tunable Topological Valley Transport in Bilayer Graphene
- Electronic properties of bilayer and multilayer graphene
- Domain walls in gapped graphene
- Gate-controlled topological conducting channels in bilayer graphene
- Direct imaging of topological edge states at a bilayer graphene domain wall
- Valley filter in strain engineered graphene
- Electronic Highways in Bilayer Graphene
- Valley-Hall Kink and Edge States in Multilayer Graphene
- Theory of the valley-valve effect in graphene nanoribbons
- Graphene Nanobubbles as Valley Filters and Beamsplitters
- A valley valve and electron beam splitter
- Localized states at zigzag edges of bilayer graphene
- Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve and universal reversible logic gate
- Transmission through a biased graphene bilayer barrier
- Light-Induced Valleytronics in Pristine Graphene
- Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering
- Carbon nanoelectronics: unzipping tubes into graphene ribbons
- Valley separation in graphene by polarized light
- Electronic transport through bilayer graphene flakes
- Observation of the quantum valley Hall state in ballistic graphene superlattices
- Transmission through a boundary between monolayer and bilayer graphene
- Tunable and giant valley-selective Hall effect in gapped bilayer graphene
- Charge transport in dual gated bilayer graphene with Corbino geometry
- Electronic structure of polychiral carbon nanotubes
- Valley polarization induced second harmonic generation in graphene
- Four band tunneling in bilayer graphene
- Manipulation and Characterization of the Valley Polarized Topological Kink States in Graphene Based Interferometers
- Helical scattering and valleytronics in bilayer graphene
- Valley filtering and electronic optics using polycrystalline graphene
- Topological resonance and single-optical-cycle valley polarization in gapped graphene
- Electronic transport across linear defects in graphene
- Anisotropic Strain Induced Soliton Movement Changes Stacking Order and Bandstructure of Graphene Multilayers
- Topological Valley Currents in Bilayer Graphene/Hexagonal Boron Nitride Superlattices
- Gate-controlled conductance through bilayer graphene ribbons
- Valley-polarization in biased bilayer graphene using circularly polarized light
- An epitaxial graphene platform for zero-energy edge state nanoelectronics
- Intense-pulse dynamics of massless Dirac electrons
- Spectrum of pi electrons in bilayer graphene nanoribbons and nanotubes: an analytical approach
- Tunable valley Hall effect in gate-defined graphene superlattices
- Quantum transport across van der Waals domain walls in bilayer graphene
- Interplay between topological protected valley and quantum Hall edge transport
- Bulk-edge correspondence with generalized chiral symmetry
- Topological junction states and their crystalline network in chiral-symmetric systems: application to graphene nanoribbons
- Transmission across a bilayer graphene region
- Transport properties of hybrid single-bilayer graphene interfaces in magnetic field
- Effectuating tunable valley selection via multi-terminal monolayer graphene devices
- Perturbation calculations on interlayer transmission rates from symmetric to antisymmetric channels in parallel armchair nanotube junctions
- Electronic transmission in Graphene suppressed by interlayer interference
- Emergent chiral symmetry in non-bipartite kagome and pyrochlore lattices with spin-orbit coupling
- Origins of Valley Current Reversal in Partially Overlapped Graphene Layers
- Tunnel Valley Current Filter in the Partially Overlapped Graphene under the Vertical Electric Field