Electronic transport across linear defects in graphene
arXiv:1504.00929 · doi:10.1103/PhysRevB.92.045426
Abstract
We investigate the low-energy electronic transport across grain boundaries in graphene ribbons and infinite flakes. Using the recursive Green's function method, we calculate the electronic transmission across different types of grain boundaries in graphene ribbons. We show results for the charge density distribution and the current flow along the ribbon. We study linear defects at various angles with the ribbon direction, as well as overlaps of two monolayer ribbon domains forming a bilayer region. For a class of extended defect lines with periodicity 3, an analytic approach is developed to study transport in infinite flakes. This class of extended grain boundaries is particularly interesting, since the and Dirac points are superposed.
15 pages, 13 figures
References in corpus (22)
- Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
- Asymmetry gap in the electronic band structure of bilayer graphene
- Electronic transport in polycrystalline graphene
- Topological Defects in Graphene: Dislocations and Grain Boundaries
- Polycrystalline graphene and other two-dimensional materials
- Graphene valley filter using a line defect
- Cones, pringles, and grain boundary landscapes in graphene topology
- Transport in Bilayer Graphene: Calculations within a self-consistent Born approximation
- Spatially resolved spectroscopy of monolayer graphene on SiO2
- Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering
- Electronic transport through bilayer graphene flakes
- Effective medium theory for disordered two-dimensional graphene
- Revealing the grain structure of graphene grown by chemical vapor deposition
- Grain Boundaries in Graphene on SiC(000) Substrate
- One-dimensional quantum channel in a graphene line defect
- Electronic transport through ordered and disordered graphene grain boundaries
- Ab initio quantum transport through armchair graphene nanoribbons: Streamlines in the current density
- Scattering by linear defects in graphene: a continuum approach
- Effect of the disorder in graphene grain boundaries: A wave packet dynamics study
- Electron interaction, charging and screening in grain boundaries in graphene
- Scattering by linear defects in graphene: a tight-binding approach
- Current flow in biased bilayer graphene: the role of sublattices
Cited by in corpus (12)
- Scaling Properties of Polycrystalline Graphene: A Review
- Electronic Flux Density Maps Reveal Unique Current Patterns in a Single-Molecule-Graphene-Nanoribbon Junction
- Strain-tuning of edge magnetism in zigzag graphene nanoribbons
- Electron transport properties of graphene nanoribbons with Gaussian deformation
- Intervalley scattering of graphene massless Dirac fermions at 3-periodic grain boundaries
- Transmission across a bilayer graphene region
- Origins of Valley Current Reversal in Partially Overlapped Graphene Layers
- Valley to charge current conversion in graphene grain boundaries
- First Principles Study of Electronic Structure and Transport in Graphene Grain Boundaries
- Tunnel Valley Current Filter in the Partially Overlapped Graphene under the Vertical Electric Field
- Energy symmetry and interlayer wave function ratio of tunneling electrons in partially overlapped graphene
- Scattering of a Dirac particle by a Berry phase domain wall