Third edge for a graphene nanoribbon: A tight-binding model calculation
arXiv:1008.1211 · doi:10.1103/PhysRevB.83.155436
Abstract
The electronic and transport properties of an extended linear defect embedded in a zigzag nanoribbon of realistic width are studied, within a tight binding model approach. Our results suggest that such defect profoundly modify the properties of the nanoribbon, introducing new conductance quantization values and modifying the conductance quantization thresholds. The linear defect along the nanoribbon behaves as an effective third edge of the system, which shows a metallic behavior, giving rise to new conduction pathways that could be used in nanoscale circuitry as a quantum wire.
6 pages, 6 figures. Two new figures and a few references added
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- One-dimensional quantum channel in a graphene line defect
- Electronic transport across linear defects in graphene
- Positional dependence of energy gap on line defect in armchair graphene nanoribbons: Two-terminal transport and related issues
- Scattering by linear defects in graphene: a continuum approach
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- Universality and stability of the edge states of chiral-symmetric topological semimetals and surface states of the Luttinger semimetal
- Electron interaction, charging and screening in grain boundaries in graphene
- Role of line defect in the bandgap and transport properties of silicene nanoribbons
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- Electron states and magneto-transport in a graphene geometry with a fractal distribution of holes
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