One-dimensional quantum channel in a graphene line defect
arXiv:1303.0801 · doi:10.1103/PhysRevB.86.085437
Abstract
Using a tight-binding model, we study a line defect in graphene where a bulk energy gap is opened by sublattice symmetry breaking. It is found that sublattice symmetry breaking may induce many configurations that correspond to different band spectra. In particular, a gapless state is observed for a configuration which hold a mirror symmetry with respect to the line defect. We find that this gapless state originates from the line defect and is independent of the width of the graphene ribbon, the location of the line defect, and the potentials in the edges of the ribbon. In particular, the gapless state can be controlled by the gate voltage embedded below the line defect. Finally, this result is supported with conductance calculations. This study shows how a quantum channel could be constructed using a line defect, and how the quantum channel can be controlled by tuning the gate voltage embedded below the line defect.
8 pages, 10 figures
References in corpus (21)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Two Dimensional Atomic Crystals
- Ultrahigh electron mobility in suspended graphene
- Energy Gaps in Graphene Nanoribbons
- Magnetism in Graphene Induced by Single-Atom Defects
- Colloquium: The transport properties of graphene: An introduction
- Electronic transport in polycrystalline graphene
- Induced Magnetic Ordering by Proton Irradiation in Graphite
- Topological Defects in Graphene: Dislocations and Grain Boundaries
- Room-temperature ferromagnetism in graphite driven by 2D networks of point defects
- Graphene valley filter using a line defect
- Edge states in Graphene: from gapped flat band to gapless chiral modes
- Charge Transport in Disordered Graphene-Based Low Dimensional Materials
- Cones, pringles, and grain boundary landscapes in graphene topology
- Defect Engineering: Graphene Gets Designer Defects
- The dependence of topological Anderson insulator on the type of disorder
- Electronic States of Graphene Grain Boundaries
- Nature of Spin Hall Effect in a finite Ballistic Two-Dimensional System with Rashba and Dresselhaus spin-orbit interaction
- Defect Induced Resonances and Magnetic Patterns in Graphene
- Measuring the phonon-assisted spectral function by using a non-quilibrium three-terminal single-molecular device