Electron interaction, charging and screening in grain boundaries in graphene
arXiv:1309.0127 · doi:10.1103/PhysRevB.88.085436
Abstract
Electronic, transport, and spin properties of grain boundaries (GBs) are investigated in electrostatically doped graphene at finite electron densities within the Hartree and Hubbard approximations. We demonstrate that depending on the character of the GBs, the states residing on them can have a metallic character with a zero group velocity or can be fully populated losing the ability to carry a current. These states show qualitatively different features in charge accumulation and spin polarization. We also demonstrate that the semiclassical Thomas-Fermi approach provides a satisfactory approximation to the calculated self-consistent potential. The conductance of GBs is reduced due to enhanced backscattering from this potential.
7 pages, 6 figures
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- First Principles Study of Electronic Structure and Transport in Graphene Grain Boundaries
- Electronic response of graphene to linelike charge perturbations
- Localized electronic states at grain boundaries on the surface of graphene and graphite