Transport Properties of Graphene Nanoroads in Boron-Nitride Sheets

Abstract

We demonstrate that the one-dimensional (1D) transport channels that appear in the gap when graphene nanoroads are embedded in boron-nitride (BN) sheets are more robust when they are inserted at AB/BA grain boundaries. Our conclusions are based on ab-initio electronic structure calculations for a variety of different crystal orientations and bonding arrangements at the BN/C interfaces. This property is related to the valley-Hall conductivity present in the BN band structure and to the topologically protected kink states that appear in continuum Dirac models with position dependent masses.

15pages, 6 figures

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Cited by in corpus (8)

• Quantum spin Hall effect on germanene nanoroad embedded in a completely hydrogenated germanene
• Current partition at zero-line intersection of quantum anomalous Hall topologies
• Zero-line modes at stacking faulted domain walls in multilayer graphene
• Unbalanced edge modes and topological phase transition in gated trilayer graphene
• Dependence of atomic arrangement on length of flat bands in zigzag BC2N nanoribbons
• Electron scattering of mass-inverted in graphene quantum dots
• Chiral properties of topological-state loops
• Robustness of topologically protected transport in graphene-boron nitride lateral heterostructures