Zero-line modes at stacking faulted domain walls in multilayer graphene

Abstract

Rhombohedral multilayer graphene is a physical realization of the chiral two-dimensional electron gas that can host zero-line modes (ZLMs), also known as kink states, when the local ap opened by inversion symmetry breaking potential changes sign in real space. Here we study how the variations in the local stacking coordination of multilayer graphene affects the formation of the ZLMs. Our analysis indicates that the valley Hall effect develops whenever an interlayer potential difference is able to open up a band gap in stacking faulted multilayer graphene, and that ZLMs can appear at the domain walls separating two distinct regions with imperfect rhombohedral stacking configurations. Based on a tight-binding formulation with distant hopping terms between carbon atoms, we first show that topologically distinct domains characterized by the valley Chern number are separated by a metallic region connecting AA and AA${}^{\prime }$ stacking line in the layer translation vector space. We find that gapless states appear at the interface between the two stacking faulted domains with different layer translation or with opposite perpendicular electric field if their valley Chern numbers are different.

arXiv comment10 pages, 11 figures

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Cited by in corpus (17)

• Gate-Tunable Topological Flat Bands in Trilayer Graphene-Boron Nitride Moiré Superlattices
• Manipulation and Characterization of the Valley Polarized Topological Kink States in Graphene Based Interferometers
• Perfect one-dimensional chiral states in biased twisted bilayer graphene
• The emergence of one-dimensional channels in marginal-angle twisted bilayer graphene
• Twistronics in graphene-based van der Waals structures
• Gate tunable current partition in graphene based topological zero lines
• Metallic Network of Topological Domain Walls
• Topological Zero-Line Modes in Folded Bilayer Graphene
• Valley-Current Splitter in Minimally Twisted Bilayer Graphene
• Layer Zero-Line Modes in Antiferromagnetic Topological Insulators
• Transport Induced Dimer State from Topological Corner States
• Topological Valley Transport in Bilayer Graphene Induced by Interlayer Sliding
• Graphene with Rashba spin-orbit interaction and coupling to a magnetic layer: Electron states localized at the domain wall
• Physical Origin of Current Partition at a Topological Trifurcation
• Valley selecting current partition at zero-line mode of quantum anomalous Hall topologies
• Controlling the Interferometers of Zero-Line Modes in Graphene by Pseudomagnetic field
• A general relation between stacking order and Chern index: a topological map of minimally twisted bilayer graphene