The role of geometry and topological defects in the 1D zero-line modes of graphene

Abstract

Breaking inversion symmetry in chiral graphene systems, \textit{e.g.}, by applying a perpendicular electric field in chirally-stacked rhombohedral multilayer graphene or by introducing staggered sublattice potentials in monolayer graphene, opens up a bulk band gap that harbors a quantum valley-Hall state. When the gap size is allowed to vary and changes sign in space, a topologically-confined one-dimensional (1D) zero-line mode (ZLM) is formed along the zero lines of the local gap. Here we show that gapless ZLM with distinguishable valley degrees of freedom K and K${}^{\prime }$ exist for every propagation angle except for the armchair direction that exactly superpose the valleys. We further analyze the role of different geometries of top-bottom gated device setups that can be realized in experiments, discuss the effects of their edge misalignment, and analyze three common forms of topological defects that could influence the 1D ZLM transport properties in actual devices.

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• Manipulating Topological Valley Modes in Plasmonic Metasurfaces
• Zero-line modes at stacking faulted domain walls in multilayer graphene
• Gate tunable current partition in graphene based topological zero lines
• Metallic Network of Topological Domain Walls
• Topological Zero-Line Modes in Folded Bilayer Graphene
• Valley-Current Splitter in Minimally Twisted Bilayer Graphene
• Transport Induced Dimer State from Topological Corner States
• Two-dimensional Dirac fermions in a mass superlattice
• Tuning of Bilayer Graphene Heterostructure by Horizontally Incident Circular Polarized Light
• Valley selecting current partition at zero-line mode of quantum anomalous Hall topologies
• Physical Origin of Current Partition at a Topological Trifurcation
• Controlling the Interferometers of Zero-Line Modes in Graphene by Pseudomagnetic field