Topological Zero-Line Modes in Folded Bilayer Graphene

Abstract

We theoretically investigate a folded bilayer graphene structure as an experimentally realizable platform to produce the one-dimensional topological zero-line modes. We demonstrate that the folded bilayer graphene under an external gate potential enables tunable topologically conducting channels to be formed in the folded region, and that a perpendicular magnetic field can be used to enhance the conducting when external impurities are present. We also show experimentally that our proposed folded bilayer graphene structure can be fabricated in a controllable manner. Our proposed system greatly simplifies the technical difficulty in the original proposal by considering a planar bilayer graphene (i.e., precisely manipulating the alignment between vertical and lateral gates on bilayer graphene), laying out a new strategy in designing practical low-power electronics by utilizing the gate induced topological conducting channels.

References in corpus (14)

• The electronic properties of graphene
• Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
• Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
• Topological confinement in bilayer graphene
• Edge states in Graphene: from gapped flat band to gapless chiral modes
• Multiply Folded Graphene
• Reduction of Fermi velocity in folded graphene observed by resonance Raman spectroscopy
• Electronic Highways in Bilayer Graphene
• Valley-Hall Kink and Edge States in Multilayer Graphene
• Superlattice structures in twisted bilayers of folded graphene
• Helical States in Curved Bilayer Graphene
• Zero-line modes at stacking faulted domain walls in multilayer graphene
• Interlayer Configurations in Twisted Bilayers of Folded Graphene
• Enhanced Robustness of Zero-line Modes in Graphene via a Magnetic Field

Cited by in corpus (6)

• Metallic Network of Topological Domain Walls
• Valley-Current Splitter in Minimally Twisted Bilayer Graphene
• Layer Zero-Line Modes in Antiferromagnetic Topological Insulators
• Transport Induced Dimer State from Topological Corner States
• Physical Origin of Current Partition at a Topological Trifurcation
• Controlling the Interferometers of Zero-Line Modes in Graphene by Pseudomagnetic field