Gate tunable current partition in graphene based topological zero lines

Abstract

We demonstrate new mechanisms for gate tunable current partition at topological zero-line intersections in a graphene-based current splitter. Based on numerical calculations of the non-equilibrium Green's functions and Landauer-Büttiker formula, we show that the presence of a perpendicular magnetic field on the order of a few Teslas allows for carrier sign dependent current routing. In the zero-field limit the control on current routing and partition can be achieved within a range of $10\%$-$90\%$ of the total incoming current by tuning the carrier density at tilted intersections, or by modifying the relative magnitude of the bulk band gaps via gate voltage. We discuss the implications of our findings in the design of topological zero-line networks where finite orbital magnetic moments are expected when the current partition is asymmetric.

14 pages, 4 figures

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• Metallic Network of Topological Domain Walls
• Building programable integrated circuits through disordered Chern insulators
• Valley-Current Splitter in Minimally Twisted Bilayer Graphene
• Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene
• Physical Origin of Current Partition at a Topological Trifurcation
• Valley selecting current partition at zero-line mode of quantum anomalous Hall topologies
• Controlling the Interferometers of Zero-Line Modes in Graphene by Pseudomagnetic field