Spin helical states and spin transport of the line defect in silicene lattice
arXiv:1601.01277 · doi:10.1016/j.physleta.2014.11.055
Abstract
We investigated the electronic structure of a silicene-like lattice with a line defect under the consideration of spin-orbit coupling. In the bulk energy gap, there are defect related bands corresponding to spin helical states localized beside the defect line: spin-up electrons flow forward on one side near to the line defect and move backward on the other side, and vice verse for spin-down electrons. When the system is subjected to random distribution of spin-flipping scatterers, electrons suffer much less spin-flipped scattering when they transport along the line defect than in the bulk. An electric gate above the line defect can tune the spin-flipped transmission, which makes the line defect as a spin-controllable waveguide.
arXiv comment13 pages, 5 figures
References in corpus (15)
- The electronic properties of graphene
- Quantum Spin Hall Effect in Graphene
- Quantum Spin Hall Effect in Silicene
- Electrically Tunable Band Gap in Silicene
- Valley-Polarized Metals and Quantum Anomalous Hall Effect in Silicene
- Evidence for Dirac Fermions in a honeycomb lattice based on silicon
- Graphene valley filter using a line defect
- Valley-Polarized Quantum Anomalous-Hall Effects in Silicene
- Spin-orbit coupling in hydrogenated graphene
- Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering
- A controllable valley polarization in Graphene
- Third edge for a graphene nanoribbon: A tight-binding model calculation
- One-dimensional quantum channel in a graphene line defect
- Spin and valley transports in junctions of Dirac fermions
- Localized defect modes in graphene