A controllable valley polarization in Graphene

Abstract

The electron transport of different conical valleys is investigated in graphene with extended line-defects. Intriguingly, the electron with a definite incident angle can be completely modulated into one conical valley by a resonator which consists of several paralleling line-defects. The related incident angle can be controlled easily by tuning the parameters of the resonator. Therefore, a controllable 100% valley polarization, as well as the detection of the valley polarization, can be realized conveniently by tuning the number of line-defects and the distance between two nearest neighbouring line-defects. This fascinating finding opens a way to realize the valley polarization by line-defects. With the advancement of experimental technologies, this resonator is promising to be realized and thus plays a key role in graphene valleytronics.

8 pages, 8 figures

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• Valley Seebeck effect in gate tunable zigzag graphene nanoribbons
• Robust all-electrical topological valley filtering using monolayer 2D-Xenes
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• The influence of anti-chiral edge states on Andreev reflection in graphene-superconductor junction
• Perfect valley filter controlled by Fermi velocity modulation in graphene
• Perfect valley filter based on topological phase in disordered $\mathrm{Sb}$ Monolayer Heterostructure
• Transmission spectra and valley processing of graphene and carbon nanotube superlattices with inter-valley coupling
• Minimal Geometry for Valley Filtering in Graphene
• Kekulé Induced Valley Birefringence and Skew Scattering in Graphene
• Valley filtering by a line-defect in graphene: quantum interference and inversion of the filter effect
• First-principles study on the electronic and transport properties of periodically nitrogen-doped graphene and carbon nanotube superlattices
• Spin helical states and spin transport of the line defect in silicene lattice
• Zero Modes on Zero-Angle Grain Boundaries in Graphene
• Effectuating tunable valley selection via multi-terminal monolayer graphene devices
• Valley current filtering and reversal by parallel side contacted armchair nanotubes
• Switchable valley functionalities of an $n-n^{-}-n$ junction in 2D semiconductors
• Origins of Valley Current Reversal in Partially Overlapped Graphene Layers
• Tunnel Valley Current Filter in the Partially Overlapped Graphene under the Vertical Electric Field