Valley current filtering and reversal by parallel side contacted armchair nanotubes
arXiv:1912.11997 · doi:10.7566/JPSJ.90.114701
Abstract
The intertube conductance of the parallel side contacted armchair nanotubes is calculated by Landauer's formula as a function of the Fermi level . When the intertube difference in the dope strength is large enough, a resonant peak dominant over the others appears in the - curve. The overlap length and the interlayer configuration do not influence the resonant energy. The intervalley transmission at the resonant peak works as a reverser and a filter of the valley current.
version 4. In part just above Table V in version 3, there is a typo, where is replaced by by mistake. (correct) The small nonzero being inversely proportional to originates from the slight difference of from 1 as is explained by Appendix D
References in corpus (15)
- The electronic properties of graphene
- The Valley Hall Effect in MoS2 Transistors
- Detecting Topological Currents in Graphene Superlattices
- Graphene valley filter using a line defect
- Generation of pure bulk valley current in graphene
- Graphene Nanobubbles as Valley Filters and Beamsplitters
- Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering
- Rotational dynamics and friction in double-walled carbon nanotubes
- Helical scattering and valleytronics in bilayer graphene
- Effects of Disorder and Momentum Relaxation on the Intertube Transport of Incommensurate Carbon Nanotube Ropes and Multiwall Nanotubes
- Giant Wave-Drag Enhancement of Friction in Sliding Carbon Nanotubes
- Valley Hall Effect and Non-Local Resistance in Locally Gapped Graphene
- Electronic inter-tube transfer in double-wall carbon nanotubes with impurities
- Transmission spectra and valley processing of graphene and carbon nanotube superlattices with inter-valley coupling
- Perturbation calculations on interlayer transmission rates from symmetric to antisymmetric channels in parallel armchair nanotube junctions