Valley current filtering and reversal by parallel side contacted armchair nanotubes
arXiv:1912.11997 · doi:10.7566/JPSJ.90.114701
Abstract
The intertube conductance of the parallel side contacted armchair nanotubes is calculated by Landauer's formula as a function of the Fermi level . When the intertube difference in the dope strength is large enough, a resonant peak dominant over the others appears in the - curve. The overlap length and the interlayer configuration do not influence the resonant energy. The intervalley transmission at the resonant peak works as a reverser and a filter of the valley current.
arXiv commentversion 4. In part just above Table V in version 3, there is a typo, where is replaced by by mistake. (correct) The small nonzero being inversely proportional to originates from the slight difference of from 1 as is explained by Appendix D
References in corpus (34)
- The electronic properties of graphene
- Electronic transport in two dimensional graphene
- Valley contrasting physics in graphene: magnetic moment and topological transport
- The Valley Hall Effect in MoS2 Transistors
- Detecting Topological Currents in Graphene Superlattices
- Negative local resistance caused by viscous electron backflow in graphene
- Graphene valley filter using a line defect
- Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene
- Quantum transport in carbon nanotubes
- Molecular Dynamics Simulations of Carbon Nanotubes as Gigahertz Oscillators
- Measuring Hall Viscosity of Graphene's Electron Fluid
- Contact resistance between carbon nanotubes
- Generation of pure bulk valley current in graphene
- Graphene Nanobubbles as Valley Filters and Beamsplitters
- Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering
- Observation of the quantum valley Hall state in ballistic graphene superlattices
- Methods of calculation of a friction coefficient: Application to the nanotubes
- A controllable valley polarization in Graphene
- Rotational dynamics and friction in double-walled carbon nanotubes
- Electronic structure of polychiral carbon nanotubes
- Helical scattering and valleytronics in bilayer graphene
- Effects of Disorder and Momentum Relaxation on the Intertube Transport of Incommensurate Carbon Nanotube Ropes and Multiwall Nanotubes
- Quantum Interference Effects in Electronic Transport through Nanotube Contacts
- Valley switch in a graphene superlattice due to pseudo-Andreev reflection
- Giant Wave-Drag Enhancement of Friction in Sliding Carbon Nanotubes
- Valley Hall Effect and Non-Local Resistance in Locally Gapped Graphene
- Valley currents and non-local resistances of graphene nanostructures with broken inversion symmetry from the perspective of scattering theory
- Electronic inter-tube transfer in double-wall carbon nanotubes with impurities
- Transmission spectra and valley processing of graphene and carbon nanotube superlattices with inter-valley coupling
- Tunable valley Hall effect in gate-defined graphene superlattices
- Conductance of telescoped double-walled nanotubes from perturbation calculations
- Numerical study of the negative nonlocal resistance and the backflow current in a ballistic graphene system
- Perturbation calculations on interlayer transmission rates from symmetric to antisymmetric channels in parallel armchair nanotube junctions
- Relation between dispersion lines and conductance of telescoped armchair double-wall nanotubes analyzed using perturbation formulas and first-principles calculations