Valley Hall Effect and Non-Local Resistance in Locally Gapped Graphene
arXiv:1910.00489 · doi:10.1103/PhysRevB.103.115406
Abstract
We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance () fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multi-terminal device responses, the presence of a non-uniform local bandgap is shown to give rise to valley-dependent scattering and a finite Fermi surface contribution to the valley Hall conductivity, related to characteristics of . These features are robust against disorder and provide a plausible interpretation of controversial experiments in graphene/hBN superlattices. Our findings suggest both an alternative mechanism for the generation of valley Hall effect in graphene, and a route towards valley-dependent electron optics, by materials and device engineering.
arXiv comment6 pages, 4 figures
References in corpus (67)
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
- Valley contrasting physics in graphene: magnetic moment and topological transport
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- Valley filter and valley valve in graphene
- Gauge fields in graphene
- Commensurate-incommensurate transition for graphene on hexagonal boron nitride
- Visualizing Individual Nitrogen Dopants in Monolayer Graphene
- Detecting Topological Currents in Graphene Superlattices
- Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2
- Graphene valley filter using a line defect
- Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene
- Gate-tunable Topological Valley Transport in Bilayer Graphene
- Origin of band gaps in graphene on hexagonal boron nitride
- Magnetic Insulator-Induced Proximity Effects in Graphene: Spin Filtering and Exchange Splitting Gaps
- Theory of the anomalous Hall effect from the Kubo formula and the Dirac equation
- Gauge field induced by ripples in graphene
- The recursive Green's function method for graphene
- Band Structure Engineering of 2D Materials using Patterned Dielectric Superlattices
- Valley filter in strain engineered graphene
- Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers
- Graphene Nanobubbles as Valley Filters and Beamsplitters
- Imaging mesoscopic spin Hall flow: Spatial distribution of local spin currents and spin densities in and out of multiterminal spin-orbit coupled semiconductor nanostructures
- A valley-spin qubit in a carbon nanotube
- Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve and universal reversible logic gate
- Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering
- Spin Hall effect and Weak Antilocalization in Graphene/Transition Metal Dichalcogenide Heterostructures
- Extrinsic spin Hall effect induced by resonant skew scattering in graphene
- Real-space calculation of the conductivity tensor for disordered topological matter
- Topological Bloch Bands in Graphene Superlattices
- Linear Scaling Quantum Transport Methodologies
- Topological Valley Currents in Gapped Dirac Materials
- Observation of the quantum valley Hall state in ballistic graphene superlattices
- Valley-based noise-resistant quantum computation using Si quantum dots
- Edge currents shunt the insulating bulk in gapped graphene
- Current splitting and valley polarization in elastically deformed graphene
- Universal Quantum Computing with Spin and Valley
- Mie scattering analog in graphene: lensing, particle confinement, and depletion of Klein tunneling
- Valley engineering by strain in Kekulé-distorted graphene
- Pseudomagnetic fields and triaxial strain in graphene
- Strain controlled valley filtering in multi-terminal graphene structures
- Valley-Polarized Quantum Transport Generated by Gauge Fields in Graphene
- Origin of nonlocal resistance in multiterminal graphene on hexagonal-boron-nitride: Fermi surface edge currents rather than Fermi sea topological valley currents
- Resonant tunneling in graphene pseudomagnetic quantum dots
- Gate-tunable two-dimensional superlattices in graphene
- Local versus extended deformed graphene geometries for valley filtering
- A new decomposition of the Kubo-Bastin formula
- Quantum Diagrammatic Theory of the Extrinsic Spin Hall Effect in Graphene
- Quantum Wires and Waveguides Formed in Graphene by Strain
- Patched Green's function techniques for two dimensional systems: Electronic behaviour of bubbles and perforations in graphene
- Electronic structure of graphene beyond the linear dispersion regime
- Topological Valley Currents in Bilayer Graphene/Hexagonal Boron Nitride Superlattices
- Nonlocal topological valley transport at large valley Hall angles
- Graphene Quantum Strain Transistors
- Kubo-Bastin approach for the spin Hall conductivity of decorated graphene
- Nonlocal Spin Dynamics in the Crossover from Diffusive to Ballistic Transport
- Electron flow in circular graphene quantum dots
- Electron trajectories and magnetotransport in nanopatterned graphene under commensurability conditions
- Edge modes and non local conductance in graphene superlattices
- Sublattice asymmetry of impurity doping in graphene: A review
- Valley currents and non-local resistances of graphene nanostructures with broken inversion symmetry from the perspective of scattering theory
- Valley notch filter in a graphene strain superlattice: Green's function and machine learning approach
- Charge, Spin and Valley Hall Effects in Disordered Graphene
- Sublattice imbalance of substitutionally doped nitrogen in graphene
- Minimal Geometry for Valley Filtering in Graphene
- Low-dissipation edge currents without edge states
- Electronic transport in graphene nanoribbons with sublattice-asymmetric doping
Cited by in corpus (15)
- Tunable and giant valley-selective Hall effect in gapped bilayer graphene
- Non-identical moiré twins in bilayer graphene
- Valley current generation using biased bilayer graphene dots
- Inverse Design of a Graphene-Based Quantum Transducer via Neuroevolution
- Non-conservation of the valley density and its implications for the observation of the valley Hall effect
- Optical valley separation in two-dimensional semimetals with tilted Dirac cones
- Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moire superlattice of transition metal dichalcogenides
- Designing Band Structures by Patterned Dielectric Superlattices
- Valley current filtering and reversal by parallel side contacted armchair nanotubes
- Valley-dependent transport through graphene quantum dots due to proximity-induced, staggered spin-orbit couplings
- Origins of Valley Current Reversal in Partially Overlapped Graphene Layers
- Generation and control of non-local chiral currents in graphene superlattices by orbital Hall effect
- Hexagonal boron nitride/bilayer graphene moiré superlattices in the Dirac-material family: energy-band engineering and carrier doping by dual gating
- Quantized valley Hall response from local bulk density variations
- Proximity spin-orbit coupling in graphene on alloyed transition metal dichalcogenides