Valley current generation using biased bilayer graphene dots
arXiv:2105.11201 · doi:10.1103/PhysRevB.103.235435
Abstract
Intrinsic and extrinsic valley Hall effects are predicted to emerge in graphene systems with uniform or spatially-varying mass terms. Extrinsic mechanisms, mediated by the valley-dependent scattering of electrons at the Fermi surface, can be directly linked to quantum transport simulations. This is a promising route towards more complete experimental investigation of valleytronic phenomena in graphene, but a major obstacle is the difficulty in applying the sublattice-dependent potentials required. Here we show that strongly valley-dependent scattering also emerges from bilayer graphene quantum dots, where the gap size can be easily modulated using the interlayer potentials in dual-gated devices. Robust valley-dependent scattering and concomitant valley currents are observed for a range of systems, and we investigate the role of dot size, mass strength and additional potential terms. Finally, we note that a strong valley splitting of electronic current also emerges when a biased bilayer dot is embedded in a single layer of graphene, but that the effect is less robust than for a bilayer host. Our findings suggest that bilayer graphene devices with custom mass profiles provide an excellent platform for future valleytronic exploration of two-dimensional materials.
arXiv comment14 pages, 8 figures, submitted
References in corpus (89)
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
- Valley contrasting physics in graphene: magnetic moment and topological transport
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- Valley filter and valley valve in graphene
- Asymmetry gap in the electronic band structure of bilayer graphene
- The electronic properties of bilayer graphene
- Gauge fields in graphene
- Commensurate-incommensurate transition for graphene on hexagonal boron nitride
- Visualizing Individual Nitrogen Dopants in Monolayer Graphene
- Detecting Topological Currents in Graphene Superlattices
- Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2
- Graphene valley filter using a line defect
- Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene
- Gate-tunable Topological Valley Transport in Bilayer Graphene
- Origin of band gaps in graphene on hexagonal boron nitride
- Electronic properties of bilayer and multilayer graphene
- Gauge field induced by ripples in graphene
- Valley filter in strain engineered graphene
- Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers
- Graphene Nanobubbles as Valley Filters and Beamsplitters
- Robustness of edge states in graphene quantum dots
- Electrostatic confinement of electrons in an integrable graphene quantum dot
- A valley-spin qubit in a carbon nanotube
- Localized states at zigzag edges of bilayer graphene
- Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve and universal reversible logic gate
- Transmission through a biased graphene bilayer barrier
- Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering
- Extrinsic spin Hall effect induced by resonant skew scattering in graphene
- Topological Bloch Bands in Graphene Superlattices
- Electrostatically confined monolayer graphene quantum dots with orbital and valley splittings
- Topological Valley Currents in Gapped Dirac Materials
- Observation of the quantum valley Hall state in ballistic graphene superlattices
- Edge State Magnetism of Single Layer Graphene Nanostructures
- Valley-based noise-resistant quantum computation using Si quantum dots
- Edge currents shunt the insulating bulk in gapped graphene
- Current splitting and valley polarization in elastically deformed graphene
- Excited states in bilayer graphene quantum dots
- Universal Quantum Computing with Spin and Valley
- Mie scattering analog in graphene: lensing, particle confinement, and depletion of Klein tunneling
- Transmission through a boundary between monolayer and bilayer graphene
- Electronic structure of triangular, hexagonal and round graphene flakes near the Fermi level
- Valley engineering by strain in Kekulé-distorted graphene
- Large tunable valley splitting in edge-free graphene quantum dots on boron nitride
- Electron-hole crossover in gate-controlled bilayer graphene quantum dots
- Pseudomagnetic fields and triaxial strain in graphene
- Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts
- Single-electron double quantum dots in bilayer graphene
- Electric-field controlled spin in bilayer triangular graphene quantum dots
- Strain controlled valley filtering in multi-terminal graphene structures
- Charge detection in gate-defined bilayer graphene quantum dots
- Long-range nontopological edge currents in charge-neutral graphene
- Topologically non-trivial valley states in bilayer graphene quantum point contacts
- Valley-Polarized Quantum Transport Generated by Gauge Fields in Graphene
- Influence of minivalleys and Berry curvature on electrostatically induced quantum wires in gapped bilayer graphene
- Helical scattering and valleytronics in bilayer graphene
- Origin of nonlocal resistance in multiterminal graphene on hexagonal-boron-nitride: Fermi surface edge currents rather than Fermi sea topological valley currents
- Gate-tunable two-dimensional superlattices in graphene
- Resonant tunneling in graphene pseudomagnetic quantum dots
- Local versus extended deformed graphene geometries for valley filtering
- Valley subband splitting in bilayer graphene quantum point contact
- Electronic transport in disordered graphene antidot lattice devices
- Quantum Diagrammatic Theory of the Extrinsic Spin Hall Effect in Graphene
- Quantum Wires and Waveguides Formed in Graphene by Strain
- Topological Valley Currents in Bilayer Graphene/Hexagonal Boron Nitride Superlattices
- Shell Filling and Trigonal Warping in Graphene Quantum Dots
- Nonlocal topological valley transport at large valley Hall angles
- Visualization and Manipulation of Bilayer Graphene Quantum Dots with Broken Rotational Symmetry and Nontrivial Topology
- Graphene Quantum Strain Transistors
- Topological confinement in graphene bilayer quantum rings
- Symmetry breaking effects on spin and electronic transport in graphene
- Valley Hall Effect and Non-Local Resistance in Locally Gapped Graphene
- Electron flow in circular graphene quantum dots
- Edge modes and non local conductance in graphene superlattices
- Sublattice asymmetry of impurity doping in graphene: A review
- Confined states in quantum dots defined within finite flakes of bilayer graphene: Coupling to the edge, ionization threshold, and valley degeneracy
- Valley currents and non-local resistances of graphene nanostructures with broken inversion symmetry from the perspective of scattering theory
- Valley notch filter in a graphene strain superlattice: Green's function and machine learning approach
- Skew Scattering and Side Jump Drive Exciton Valley Hall Effect in Two-Dimensional Crystals
- Charge, Spin and Valley Hall Effects in Disordered Graphene
- Electron Flow in Circular n-p Junctions of Bilayer Graphene
- Sublattice imbalance of substitutionally doped nitrogen in graphene
- Minimal Geometry for Valley Filtering in Graphene
- Topological valley currents via ballistic edge modes in graphene superlattices near the primary Dirac point
- Low-dissipation edge currents without edge states
- Large twisting angles in Bilayer graphene Moire quantum dot structures
- Electronic transport in graphene nanoribbons with sublattice-asymmetric doping
- Switching valley filtered current directions in multi-terminal graphene systems
Cited by in corpus (5)
- Graphene nanodrums as valleytronic devices
- Valley-dependent transport through graphene quantum dots due to proximity-induced, staggered spin-orbit couplings
- Ultrafast all-optical generation of pure spin and valley currents
- Origins of Valley Current Reversal in Partially Overlapped Graphene Layers
- Confinement in bilayer graphene via intra- and inter-layer interactions