Electron Flow in Circular n-p Junctions of Bilayer Graphene
arXiv:0905.3467 · doi:10.1103/PhysRevB.80.075416
Abstract
We present a theoretical study of electron wave functions in ballistic circular n-p junctions of bilayer graphene. Similarly to the case of a circular n-p junction of monolayer graphene, we find that (i) the wave functions form caustics inside the circular region, and (ii) the shape of these caustics are well described by a geometrical optics model using the concept of a negative refractive index. In contrast to the monolayer case, we show that the strong focusing effect is absent in the bilayer. We explain these findings in terms of the angular dependence of Klein tunneling at a planar n-p junction.
Published version 6 pages, 5 figures
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- Intraband electron focusing in bilayer graphene
- Flat-lens focusing of electrons on the surface of a topological insulator
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- Dot-bound and dispersive states in graphene quantum dot superlattices
- Valley current generation using biased bilayer graphene dots
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- Scattering of massless Dirac fermions in circular p-n junctions with and without magnetic field