Intraband electron focusing in bilayer graphene

Abstract

We propose an implementation of a valley selective electronic Veselago lens in bilayer graphene. We demonstrate that in the presence of an appropriately oriented potential step, low-energy electrons radiating from a point source can be re-focused coherently within the same band. The phenomenon is due to the trigonal warping of the band structure that leads to a negative refraction index. We show that the interference pattern can be controlled by an external mechanical strain.

14 pages, 8 figures

References in corpus (23)

• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Landau level degeneracy and quantum Hall effect in a graphite bilayer
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Veselago Lens for Electrons: Focusing and Caustics in Graphene p-n Junctions
• Hexagonal Warping Effects in the Surface States of Topological Insulator Bi${}_2$Te${}_3$
• Giant Phonon-induced Conductance in Scanning Tunneling Spectroscopy of Gate-tunable Graphene
• Interaction-Driven Spectrum Reconstruction in Bilayer Graphene
• First Principles Analysis of Electron-Phonon Interaction in Graphene
• Spontaneous symmetry breaking and Lifshitz transition in bilayer graphene
• Imaging Magnetic Focusing of Coherent Electron Waves
• Strained bilayer graphene: Band structure topology and Landau level spectrum
• Caustics due to Negative Refractive Index in Circular Graphene p-n Junctions
• Generation of valley polarized current in bilayer graphene
• Electric-Field-control of spin rotation in bilayer graphene
• Klein Tunneling and Berry Phase $\pi$ in Bilayer Graphene with a Band Gap
• Selective focusing of electrons and holes in a graphene-based superconducting lens
• Conductance anomaly near the Lifshitz transition in strained bilayer graphene
• Flat-lens focusing of electrons on the surface of a topological insulator
• Electron Flow in Circular n-p Junctions of Bilayer Graphene
• On the applicability of the two-band model to describe transport across n-p junctions in bilayer graphene
• Room temperature ballistic transport in InSb quantum well nanodevices
• Landau levels in deformed bilayer graphene at low magnetic fields
• Catastrophe optics of caustics in single and bilayer graphene: fine structure of caustics

Cited by in corpus (11)

• Valley-Polarized Quantum Transport Generated by Gauge Fields in Graphene
• Coherent Jetting behind a gate-defined Channel in Bilayer Graphene
• Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene
• Electron collimation at van der Waals domain walls in bilayer graphene
• Atomic scale characterization of graphene p-n junctions for electron-optical applications
• Gate-tunable regular and chaotic electron dynamics in ballistic bilayer graphene cavities
• Veselago focusing of anisotropic massless Dirac fermions
• Point contacts in encapsulated graphene
• Scattering of massless Dirac fermions in circular p-n junctions with and without magnetic field
• Complete Spin and Valley Polarization by Total External Reflection from Potential Barriers in Bilayer Graphene and Monolayer Transition Metal Dichalcogenides
• The focusing effect of electron flow and negative refraction in three dimensional topological insulators