Intraband electron focusing in bilayer graphene
arXiv:1203.6517 · doi:10.1088/1367-2630/14/6/063028
Abstract
We propose an implementation of a valley selective electronic Veselago lens in bilayer graphene. We demonstrate that in the presence of an appropriately oriented potential step, low-energy electrons radiating from a point source can be re-focused coherently within the same band. The phenomenon is due to the trigonal warping of the band structure that leads to a negative refraction index. We show that the interference pattern can be controlled by an external mechanical strain.
14 pages, 8 figures
References in corpus (11)
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Veselago Lens for Electrons: Focusing and Caustics in Graphene p-n Junctions
- Giant Phonon-induced Conductance in Scanning Tunneling Spectroscopy of Gate-tunable Graphene
- Imaging Magnetic Focusing of Coherent Electron Waves
- Strained bilayer graphene: Band structure topology and Landau level spectrum
- Caustics due to Negative Refractive Index in Circular Graphene p-n Junctions
- Generation of valley polarized current in bilayer graphene
- Electric-Field-control of spin rotation in bilayer graphene
- Selective focusing of electrons and holes in a graphene-based superconducting lens
- Flat-lens focusing of electrons on the surface of a topological insulator
- Electron Flow in Circular n-p Junctions of Bilayer Graphene