Landau levels in deformed bilayer graphene at low magnetic fields

Abstract

We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how strain affects the low-energy electronic band structure. Depending on the magnitude and direction of applied strain, we identify three regimes of qualitatively different electronic dispersions. We also show that in a weak magnetic field, sufficient strain results in the filling factor ff=+-4 being the most stable in the quantum Hall effect measurement, instead of ff=+-8 in unperturbed bilayer at a weak magnetic field. To mention, in one of the strain regimes, the activation gap at ff=+-4 is, down to very low fields, weakly dependent on the strength of the magnetic field.

14 single-column pages, 5 figures, more details on material presented in arXiv:1104.5029

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• Optical and magneto-optical far-infrared properties of bilayer graphene
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• Magnetic spectrum of trigonally warped bilayer graphene - semiclassical analysis, zero modes, and topological winding numbers
• Engineering of the topological magnetic moment of electrons in bilayer graphene using strain and electrical bias
• Conductance anomaly near the Lifshitz transition in strained bilayer graphene
• Intraband electron focusing in bilayer graphene
• Strain-induced modulation of Dirac cones and van Hove singularities in twisted graphene bilayer
• An equivalence between monolayer and bilayer honeycomb lattices
• Stability of Weyl node merging processes under symmetry constraints
• Second and third harmonics generation by coherent sub-THz radiation at induced Lifshitz transitions in gapped bilayer graphene
• Evolution of the Berry curvature dipole in uniaxially strained bilayer graphene