Engineering of the topological magnetic moment of electrons in bilayer graphene using strain and electrical bias

Abstract

Topological properties of electronic states in multivalley two-dimensional materials, such as mono- and bilayer graphene, or thin films of rhombohedral graphite, give rise to various unusual magneto-transport regimes. Here, we investigate the tunability of the topological magnetic moment (related to the Berry curvature) of electronic states in bilayer graphene using strain and vertical bias. We show how one can controllably vary the valley $g$-factor of the band-edge electrons, $g_v^{\ast }$, across the range $10<|g_v^{\ast }|<200$, and we discuss the manifestations of the topological magnetic moment in the anomalous contribution towards the Hall conductivity and in the Landau level spectrum.

6 pages, 5 figures

References in corpus (8)

• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
• Asymmetry gap in the electronic band structure of bilayer graphene
• The electronic properties of bilayer graphene
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• Berry Curvature Dipole in Strained Graphene: a Fermi Surface Warping Effect
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• Probing two-electron multiplets in bilayer graphene quantum dots
• Proximity spin-orbit and exchange coupling in ABA and ABC trilayer graphene van der Waals heterostructures
• Theory of tunneling spectra for a few-electron bilayer graphene quantum dot
• Quantum nonlinear planar Hall effect in bilayer graphene: an orbital effect of a steady in-plane magnetic field
• Atomic configuration controlled photocurrent in van der Waals homostructures
• Mechanical control of quantum transport in graphene
• Gate-tunable regular and chaotic electron dynamics in ballistic bilayer graphene cavities
• Kagomé network of chiral miniband-edge states in double-aligned graphene-hexagonal boron nitride structures
• Pauli blockade catalogue and three- and four-particle Kondo effect in bilayer graphene quantum dots
• Extended Hubbard model describing small multi-dot arrays in bilayer graphene
• Electrically tunable and reversible magnetoelectric coupling in strained bilayer graphene
• Impact of competing energy scales on the shell-filling sequence in elliptic bilayer graphene quantum dots
• Tuning confined states and valley g-factors by quantum dot design in bilayer graphene
• Quantum Transport Straintronics and Mechanical Aharonov-Bohm Effect in Quasi-metallic SWCNTs
• Probing valley phenomena with gate-defined valley splitters
• Direct driving of electronic and phononic degrees of freedom in a honeycomb bilayer with infrared light
• Engineering of Chern number of topological bands in bilayer graphene by in-plane magnetic field and electrical bias
• Confinement in bilayer graphene via intra- and inter-layer interactions
• Straintronics and twistronics in bilayer graphene
• Evolution of the Berry curvature dipole in uniaxially strained bilayer graphene