Engineering of Chern number of topological bands in bilayer graphene by in-plane magnetic field and electrical bias

Abstract

Based on the full Hamiltonian of bilayer graphene, phase transitions are realized by the change of the in-plane magnetic field and the electrical bias in bilayer graphene. We show that the engineering of Chern numbers of four bands is possible by an applied in-plane magnetic field and an electrical bias in bilayer graphene. Our results are promising for the exploration of new topological phenomena in 2D materials.

References in corpus (5)

• Strained bilayer graphene: Band structure topology and Landau level spectrum
• Energy spectrum of graphene multilayers in a parallel magnetic field
• Magnetic ratchet effect in bilayer graphene
• Probing Chern number by opacity and topological phase transition by a nonlocal Chern marker
• Quantum nonlinear planar Hall effect in bilayer graphene: an orbital effect of a steady in-plane magnetic field