Berry Curvature Dipole in Strained Graphene: a Fermi Surface Warping Effect

Abstract

It has been recently established that optoelectronic and non-linear transport experiments can give direct access to the dipole moment of the Berry curvature in non-magnetic and non-centrosymmetric materials. Thus far, non-vanishing Berry curvature dipoles have been shown to exist in materials with substantial spin-orbit coupling where low-energy Dirac quasiparticles form tilted cones. Here, we prove that this topological effect does emerge in two-dimensional Dirac materials even in the complete absence of spin-orbit coupling. In these systems, it is the warping of the Fermi surface that triggers sizeable Berry dipoles. We show indeed that uniaxially strained monolayer and bilayer graphene, with substrate-induced and gate-induced band gaps respectively, are characterized by Berry curvature dipoles comparable in strength to those observed in monolayer and bilayer transition metal dichalcogenides.

5 pages, 4 figures. Accepted for publication in Physical Review Letters

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• Electric Field Effect in Atomically Thin Carbon Films
• Gate-induced insulating state in bilayer graphene devices
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• Band signatures for strong nonlinear Hall effect in bilayer WTe${}_2$
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