Berry Curvature Dipole and its Strain Engineering in Layered Phosphorene

Abstract

The emergence of the fascinating non-linear Hall effect intrinsically depends on the non-zero value of the Berry curvature dipole. In this work, we predict that suitable strain engineering in layered van der Waals material phosphorene can give rise to a significantly large Berry curvature dipole. Using symmetry design principles, and a combination of feasible strain and staggered on-site potentials, we show how a substantial Berry curvature dipole may be engineered at the Fermi level. We discover that monolayer phosphorene exhibits the most intense Berry curvature dipole peak near 11.8% strain, which is also a critical point for the topological phase transition in pristine phosphorene. Furthermore, we have shown that the necessary strain value to achieve substantial Berry curvature dipole can be reduced by increasing the number of layers. We have revealed that strain in these van der Waals systems not only alters the magnitude of Berry curvature dipole to a significant value but allows control over its sign. We are hopeful that our predictions will pave way to realize the non-linear Hall effect in such elemental van der Waals systems.

Accepted for publication in "Materials Today Electronics" (2023)

References in corpus (20)

• Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications
• Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
• Accessing the transport properties of pristine few-layer black phosphorus by van der Waals passivation in inert atmosphere
• Colloquium: Quantum anomalous Hall effect
• Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus
• Toward Air-Stable Multilayer Phosphorene Thin-Films and Transistors
• Nonlinear Hall Effects
• Infrared fingerprints of few-layer black phosphorus
• Room temperature nonlinear Hall effect and wireless RF rectification in Weyl semimetal TaIrTe4
• Berry curvature dipole senses topological transition in a moiré superlattice
• Strain-tunable van der Waals interactions in few-layer black phosphorus
• Berry Curvature Dipole in Strained Graphene: a Fermi Surface Warping Effect
• Nonlinear Hall effect with time-reversal symmetry: Theory and material realizations
• Designing spin and orbital sources of Berry curvature at oxide interfaces
• Control over Berry Curvature Dipole with Electric Field in WTe2
• Observation of Nonlinear Spin-Charge Conversion in the Thin Film of Nominally Centrosymmetric Dirac Semimetal SrIrO3 at Room Temperature
• Electrically switchable giant Berry curvature dipole in silicene, germanene and stanene
• Tunable Topology and Berry Curvature Dipole in Transition Metal Dichalcogenide Janus Monolayers
• Berry curvature-induced local spin polarisation in gated graphene/WTe${}_2$ heterostructures
• Nonlinear optical Hall effect of few-layered NbSe2

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• Chirality-tunable non-linear Hall effect
• Ultrafast Optical Control of Multi-Valley States in 2D SnS