High-frequency rectification via chiral Bloch electrons

Abstract

Rectification is a process that converts electromagnetic fields into a direct current. Such a process underlies a wide range of technologies such as wireless communication, wireless charging, energy harvesting, and infrared detection. Existing rectifiers are mostly based on semiconductor diodes, with limited applicability to small voltage or high frequency inputs. Here, we present an alternative approach to current rectification that uses the intrinsic electronic properties of quantum crystals without using semiconductor junctions. We identify a previously unknown mechanism for rectification from skew scattering due to the inherent chirality of itinerant electrons in time-reversal-invariant but inversion-breaking materials. Our calculations reveal large, tunable rectification effects in graphene multilayers and transition metal dichalcogenides. Our work demonstrates the possibility of realizing high-frequency rectifiers by rational material design and quantum wavefunction engineering.

9+17 pages, 3+5 figures

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• Intrinsic nonlinear Hall effect and gate-switchable Berry curvature sliding in twisted bilayer graphene
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• Giant magnetochiral anisotropy from quantum confined surface states of topological insulator nanowires
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• Intrinsic Nonlinear Hall Detection of the Néel Vector for Two-Dimensional Antiferromagnetic Spintronics
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• Dissipation and geometry in nonlinear quantum transports of multiband electronic systems
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• Infinite Berry Curvature of Weyl Fermi Arcs
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• Observation of terahertz second harmonic generation from Dirac surface states in the topological insulator Bi${}_2$Se${}_3$
• Exact results for nonlinear Drude weights in the spin-1/2 XXZ chain
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• Nonlinear Hall effect in two-dimensional class AI metals
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• Berry Curvature Dipole and its Strain Engineering in Layered Phosphorene
• Nonlinear Hall effect from long-lived valley-polarizing relaxons
• Magnetic parity violation and parity-time-reversal-symmetric magnets
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• Nonlinear electrical transport unveils Fermi surface malleability in a moiré heterostructure
• Room Temperature Ferroelectricity and Electrically Tunable Berry Curvature Dipole in III-V Monolayers
• Nonlinear Hall effect and scaling law in Sb-doped topological insulator MnBi4Te7
• Plasmonic quantum nonlinear Hall effect in noncentrosymmetric 2D materials
• Symmetry Origin and Microscopic Mechanism of Electrical Magnetochiral Anisotropy in Tellurium
• Transverse Cooper-Pair Rectifier
• Second harmonic generation induced by gate voltage oscillation in few layer MnBi2Te4
• Electric field induced second-order anomalous Hall transport in unconventional Rashba systems
• Apparent nonreciprocal transport in FeSe bulk crystals
• Second-harmonic response as a tool to detect spin textures in magnetic nodal-line semimetal Fe${}_3$GeTe${}_2$
• Toroidal Scattering and Nonreciprocal Transport by Magnetic Impurities
• Unveiling the Miniband Structure of Graphene Moiré Superlattices via Gate-dependent Terahertz Photocurrent Spectroscopy
• Enhanced Non-linear Response by Manipulating the Dirac Point in the (111) LaTiO${}_3$/SrTiO${}_3$ Interface
• Proper Definition of Intrinsic Nonlinear Current
• Nonlinear and nonreciprocal transport effects in untwinned thin films of ferromagnetic Weyl metal SrRuO${}_3$
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• Proposal for Superconducting Photodiode
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