Enhanced Non-linear Response by Manipulating the Dirac Point in the (111) LaTiO${}_3$/SrTiO${}_3$ Interface

Abstract

Tunable spin-orbit interaction (SOI) is an important feature for future spin-based devices. In the presence of a magnetic field, SOI induces an asymmetry in the energy bands, which can produce non-linear transport effects ($V\sim I^2$). Here, we focus on such effects to study the role of SOI in the (111) LaTiO${}_3$/SrTiO${}_3$ interface. This system is a convenient platform for understanding the role of SOI since it exhibits a single-band Hall-response through the entire gate-voltage range studied. We report a pronounced rise in the non-linear resistance at a critical in-plane field $H_{cr}$. This rise disappears with a small out-of-plane field. We explain these results by considering the location of the Dirac point formed at the crossing of the spin-split energy bands. An in-plane magnetic field pushes this point outside of the Fermi surface, and consequently changes the symmetry of the Fermi contours and intensifies the non-linear transport. An out-of-plane magnetic field opens a gap at the Dirac point, thereby significantly diminishing the non-linear effects. We propose that magnetoresistance effects previously reported in interfaces with SOI could be comprehended within our suggested scenario.

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Cited by in corpus (2)

• The quantum metric of electrons with spin-momentum locking
• Dirac-like fermions anomalous magneto-transport in a spin-polarized oxide two-dimensional electron system