Room temperature quantum metric effect in TbMn6Sn6
arXiv:2411.11395 · doi:10.1038/s41467-025-62096-z
Abstract
Quantum geometry, including Berry curvature and the quantum metric, of the electronic Bloch bands has been studied via nonlinear responses in topological materials. Naturally, these material systems with intrinsic strong nonlinear responses also form the key component in nonlinear electronic devices. However, the previous reported quantum geometry effects are mainly observed at cryogenic temperatures, hindering their application in practical devices. Here we report the tuneable strong room-temperature second-harmonic transport response in a quantum magnet, TbMn6Sn6, which is governed by the quantum metric and can be tuned with applied magnetic fields. We show that around room temperature, which is close to the spontaneous spin-reorientation transition, the magnetic configurations, and therefore the related symmetry breaking phases, are easily controlled via magnetic fields. Our results also show that manipulation of the symmetries of the magnetic structure presents an effective route to tuneable quantum-geometry-based devices.
12 pages, 3 figures
References in corpus (36)
- Observation of the nonlinear Hall effect under time reversal symmetric conditions
- Discovery of a quantum limit Chern magnet TbMn6Sn6
- Time-reversal symmetry-breaking charge order in a kagome superconductor
- Nonlinear Hall Effects
- Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure
- Quantum metric-induced nonlinear transport in a topological antiferromagnet
- Room temperature nonlinear Hall effect and wireless RF rectification in Weyl semimetal TaIrTe4
- High-frequency rectification via chiral Bloch electrons
- Current-Driven Dynamics of Skyrmions Stabilized in MnSi Nanowires Revealed by Topological Hall Effect
- Observation of Topologically Robust Localized Magnetic Plasmon Skyrmions
- Unification of Nonlinear Anomalous Hall Effect and Nonreciprocal Magnetoresistance in Metals by the Quantum Geometry
- Zero-magnetic-field Hall effects in artificially corrugated bilayer graphene
- Charge order breaks time-reversal symmetry in CsVSb
- Terahertz detection based on nonlinear Hall effect without magnetic field
- Giant nonlinear Hall effect in twisted WSe
- Strain Tunable Berry Curvature Dipole, Orbital Magnetization and Nonlinear Hall Effect in WSe2 Monolayer
- Strong electrical magneto-chiral anisotropy in tellurium
- Topological charge-entropy scaling in kagome Chern magnet TbMnSn
- Gigantic magnetochiral anisotropy in the topological semimetal ZrTe5
- Orbital Magneto-Nonlinear Anomalous Hall Effect in Kagome Magnet FeSn
- Strong Room-Temperature Bulk Nonlinear Hall Effect in a Spin-Valley Locked Dirac Material
- Giant magnetochiral anisotropy from quantum confined surface states of topological insulator nanowires
- Tunable room temperature nonlinear Hall effect from the surfaces of elementary bismuth thin films
- Dissipation and geometry in nonlinear quantum transports of multiband electronic systems
- Revealing Quantum Geometry in Nonlinear Quantum Materials
- Giant Magnetochiral Anisotropy in Weyl-semimetal WTe2 Induced by Diverging Berry Curvature
- Origin of spin reorientation and intrinsic anomalous Hall effect in the kagome ferrimagnet TbMn6Sn6
- Scaling Law for Time-Reversal-Odd Nonlinear Transport
- Effect of magnetism and phonons on localized carriers in the ferrimagnetic kagome metals GdMnSn and TbMnSn
- Chiral and flat-band magnetic cluster excitations in a ferromagnetic kagome metal
- Topological and disorder corrections to the transverse Wiedemann-Franz law and Mott relation in kagome magnets
- Giant Third-Order Nonlinearity Induced by the Quantum Metric Quadrupole in Few-Layer WTe2
- Enhanced Electrical Magnetochiral Effect by Spin-hedgehog Lattice Structural Transition
- Low temperature competing magnetic energy scales in the topological ferrimagnet TbMn6Sn6
- Electrical magnetochiral anisotropy and quantum metric in chiral conductors
- Three-dimensional nature of anomalous Hall conductivity in YMn6Sn6-xGax, x ~ 0.55